LP721 datasheet, PDF - EEWORLD Datasheet

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LP721: Descriptionsilicon gate enhancement mode RF power ldmos transistor; CategoryDiscrete semiconductor The transistor; File Size34KB，2 Pages; ManufacturerPolyfet RF Devices; Websitehttp://www.polyfet.com/; Environmental Compliance

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LP721 Overview

silicon gate enhancement mode RF power ldmos transistor

LP721 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Polyfet RF Devices
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	8 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	80 W

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polyfet rf devices

LP721

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

"Polyfet" process features

low feedback and output capacitances

resulting in high F

transistors with high

input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE

RF POWER LDMOS TRANSISTOR

20.0 Watts Single Ended

Package Style AP

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

ABSOLUTE MAXIMUM RATINGS ( T = 25 C )

Total

Device

Dissipation

80 Watts

Junction to

Case Thermal

Resistance

1.80 C/W

Maximum

Junction

Temperature

200 C

Storage

Temperature

-65 C to 150 C

DC Drain

Current

Drain to

Gate

Voltage

50 V

Drain to

Source

Voltage

50 V

Gate to

Source

Voltage

20 V

8.0 A

RF CHARACTERISTICS (

SYMBOL

Gps

PARAMETER

Common Source Power Gain

Drain Efficiency

Load Mismatch Tolerance

MIN

TYP

20.0 WATTS OUTPUT )

MAX

UNITS

20:1

TEST CONDITIONS

Idq = 0.20 A, Vds =

12.5

V, F =

Idq = 0.20 A, Vds =

12.5

V, F =

500

MHz

500

MHz

VSWR

Relative Idq = 0.20 A, Vds =

12.5

V, F =

500

MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL

Bvdss

Idss

Igss

Vgs

Rdson

Idsat

Ciss

Crss

Coss

PARAMETER

Drain Breakdown Voltage

Zero Bias Drain Current

Gate Leakage Current

Gate Bias for Drain Current

Forward Transconductance

Saturation Resistance

Saturation Current

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

1.7

0.40

13.00

50.0

2.0

40.0

MIN

2.0

TYP

MAX

UNITS

Mho

Ohm

Amp

TEST CONDITIONS

Ids =

0.20 mA, Vgs = 0V

Vds = 12.5 V, Vgs = 0V

Vds = 0V Vgs = 30V

Ids = 0.20 A, Vgs = Vds

Vds = 10V, Vgs = 5V

Vgs = 20V, Ids = 8.00 A

Vgs = 20V, Vds = 10V

Vds = 12.5 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES

REVISION 04/30/2001

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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