polyfet rf devices
SR341
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F
t
transistors with high
input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
300.0 Watts Push - Pull
Package Style AR
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
500 Watts
Junction to
Case Thermal
Resistance
o
0.30 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
125 V
Drain to
Source
Voltage
125 V
Gate to
Source
Voltage
20 V
25.0 A
RF CHARACTERISTICS ( 300.0 WATTS OUTPUT )
SYMBOL
Gps
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
16
65
20:1
TYP
MAX
UNITS
dB
%
TEST CONDITIONS
Idq = 0.80 A, Vds =
50.0
V, F =
Idq = 0.80 A, Vds =
50.0
V, F =
175
MHz
175
MHz
η
VSWR
Relative Idq = 0.80 A, Vds =
50.0
V, F =
175
MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
1
5.5
0.30
35.00
400.0
15.0
200.0
MIN
125
5.0
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids = 40.00 mA, Vgs = 0V
Vds = 50.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.30 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 6.00 A
Vgs = 20V, Vds = 10V
Vds = 50.0 Vgs = 0V, F = 1 MHz
Vds = 50.0 Vgs = 0V, F = 1 MHz
Vds = 50.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 07/10/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
SR341
POUT VS PIN GRAPH
SR341 Pin vs Pout Freq=175Mhz; Idq=1A; Vds=50V
500
450
400
350
300
250
200
150
100
50
0
0
5
10
Pin in Watts
15
20
13
10
0
10
CAPACITANCE VS VOLTAGE
19
1000
S3E 1 DIE CAPACITANCE
Ciss
18
Efficiency = 55%
Pout
17
Coss
16
100
Gain
15
1dB compression = 300W
14
Crss
VDS IN VOLTS
20
30
40
50
IV CURVE
S3E 1 DIE IV
35
30
25
ID IN AMPS
20
15
10
5
0
0
vg=2v
2
4
Vg=4v
6
8
10
12
14
VDS IN VOLTS
Vg=6v
vg=8v
16
0
18
20
vg=12v
ID & GM VS VGS
100.00
S3E 1 DIE ID & GM Vs VG
Id
Id in amps; Gm in mhos
10.00
1.00
gM
0.10
0
2
4
6
8
10
Vgs in Volts
12
14
16
18
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 07/10/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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