TLP921
Toshiba Photoreflective sensor Infrared LED + Phototransistor
TLP921
Inkjet printer’s ink-level monitoring
TLP921 is a reflective photosensor combining a GaAs infrared LED with
a Si phototransistor.
·
·
·
·
·
Flush-mount package on PCB: Applied PCB thickness = 1.6 mm or
thinner
Positioning pin and single-sided screw-mount type
Short lead type: Lead length = 2.8 ± 0.3 mm
Phototransistor impermeable to visible light
Package material: polybutylene-terephthalate (UL94V-0, black)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Forward current
Forward current derating
(Ta
>
25°C)
Reverse voltage
Collector-Emitter voltage
Emitter-Collector voltage
Detector
Collector power dissipation
Collector power dissipation
derating
(Ta
>
25°C)
Collector current
Operating temperature
Storage temperature
Soldering temperature
(5 s) (Note 1)
LED
Symbol
I
F
DI
F/
°C
V
R
V
CEO
V
ECO
P
C
DP
C/
°C
I
C
T
opr
T
stg
T
sol
Rating
50
-0.33
5
35
5
75
-1
50
-30~85
-40~100
260
Unit
mA
mA/°C
V
V
V
mW
mW/°C
mA
°C
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.35 g (typ.)
―
―
―
Note 1: Soldering is performed 1.5 mm from the bottom of the package.
Marking
Monthly lot
number
Month of
manufacture
Year of
manufacture
January to December
are denoted by letters
A to L respectively
Last decimal digit of
the year of
manufacture
1
2002-04-03
TLP921
Electrical and Optical Characteristics
(Ta
=
25°C)
Characteristics
Forward voltage
LED
Reverse current
Peak emission wavelength
Detector
Dark current
Peak sensitivity wavelength
Collector current
Leakage current
Coupled
Collector-Emitter saturation
voltage
Rise time
Fall time
Symbol
V
F
I
R
l
P
I
D
(I
CEO
)
l
P
I
C
I
LEAK
V
CE (sat)
t
r
t
f
Test Condition
I
F
=
20 mA
V
R
=
5 V
I
F
=
20 mA
V
CE
=
24 V, I
F
=
0
¾
V
CE
=
5 V, I
F
=
20 mA
V
CE
=
5 V, I
F
=
20 mA
I
F
=
20 mA, I
C
=
0.3 mA
V
CE
=
2 V, I
C
=
0.5 mA
R
L
=
1 kW, d
=
8 mm
(Note 4)
(Note 2)
(Note 3)
Min
¾
¾
¾
¾
¾
580
¾
¾
¾
¾
Typ.
1.25
¾
940
¾
870
¾
¾
0.1
38
48
Max
1.4
10
¾
0.1
¾
2600
120
0.4
90
110
Unit
V
mA
nm
mA
nm
mA
mA
V
ms
Note 2: The following drawings show condition and the layout of reflectors.
Right angle prism (material: BK7)
Thickness:7 mm
7 mm
7 mm
8 mm
Sensor
Note 3: Measurement layout drawing for leakage current
Evaporated surface
of aluminum
1 mm
Evaporated
aluminum glass
8 mm
Sensor
Note 4: Measurement circuit and waveforms for Switching time
Prism
I
F
I
F
R
L
V
CC
V
OUT
V
OUT
t
r
t
f
90%
10%
2
2002-04-03
TLP921
Handling Precautions
·
When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not
immerse the entire package in the cleaning solvent. Chemical residue on the LED emitter or the
photodetector inside the phototransistor case may adversely affect the optical characteristics of the device
and may drastically reduce the collector current.
The case is made of polybutylene-terephthalate. Oil or chemicals may cause the package to melt or crack.
Care must be taken in relation to the environment in which the device is to be installed.
Mount the device on a level surface.
The collector current characteristic will deteriorate over time due to current flowing in the infrared LED.
The design of circuits which incorporate the device must take into account the change in collector current
over time.
When the 2-mm hole is used as screw fixation, please fastening torque 0.1 N or less.
·
·
·
·
3
2002-04-03
TLP921
Package Dimensions
Weight: 0.35g (typ.)
Pin connection
1
2
4
3
1:
2:
3:
4:
Anode
Cathode
Emitter
Collector
4
2002-04-03
TLP921
I
F
– Ta
80
80
P
C
– Ta
(mA)
Allowable forward current
I
F
60
Allowable collector power dissipation
P
C
(mW)
20
40
60
80
100
60
40
40
20
20
0
0
0
0
20
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
F
– V
F
100
(typ.)
5000
Ta
=
25°C
VCE
=
2 V
VCE
=
5 V
I
C
– I
F
(typ.)
50
(mA)
30
Forward current I
F
Collector current
0
-25
1.2
1.3
1.4
I
C
10
100
5
3
Ta
=
75°C
50
25
10
1
0.8
0.9
1.0
1.1
1
0.1
(mA)
1000
0.3
1
3
10
30
100
300
1000
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
Relative I
C
– Ta
1.2
(typ.)
1200
Ta
=
25°C
I
C
– V
CE
(typ.)
Relative collector current
(mA)
1
1000
20
0.8
I
C
800
15
600
10
0.6
VCE
=
5 V
IF
=
20 mA
IF
=
10 mA
0.2
-40
IF
=
5 mA
-20
0
20
40
60
80
100
Collector current
400
0.4
200
IF
=
5mA
0
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Collector-Emitter voltage V
CE
(V)
5
2002-04-03
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