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BAT54

Description
surface mount schottky barrier diode
CategoryDiscrete semiconductor    diode   
File Size145KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Environmental Compliance
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surface mount schottky barrier diode

BAT54 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSECOS
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.225 W
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAT54 Series
BAT54 / BAT54A / BAT54C / BAT54S
Elektronische Bauelemente
Surface Mount Schottky Barrier Diode
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
n
SOT-23
Dim
A
L
B S
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
3
1
2
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
n
A
B
C
D
G
H
C
n
Top View
MECHANICAL DATA
n
V
G
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
D
H
n
J
K
K
J
n
L
S
V
n
n
All Dimension in mm
3
3
3
3
1
2
1
2
1
2
1
2
BAT54 Marking: LV3,KL1
BAT54A Marking: B6,KL2
BAT54C Marking: B5,KL3
BAT54S Marking: LD3,KL4
MAXIMUM
RATINGS
(TJ = 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Symbol
VR
PF
225
1.8
IF
TJ
Tstg
200 Max
125 Max
– 55 to +150
mW
mW/°C
mA
°C
°C
Value
30
Unit
Volts
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (IR = 10
µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V(BR)R
CT
IR
VF
VF
VF
trr
VF
VF
IF
IFRM
IFSM
Min
30
Typ
7.6
0.5
0.22
0.41
0.52
0.29
0.35
Max
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2

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