LP6836P70 datasheet, PDF - EEWORLD Datasheet

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LP6836P70: Descriptionpackaged medium power phemt; CategoryDiscrete semiconductor The transistor; File Size58KB，3 Pages; ManufacturerFILTRONIC; Websitehttp://www.filcs.com

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LP6836P70 Overview

packaged medium power phemt

LP6836P70 Parametric

Parameter Name	Attribute value
Maker	FILTRONIC
package instruction	,
Reach Compliance Code	unknown

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ACKAGED

EDIUM

OWER

PHEMT

•

FEATURES

♦

23 dBm Output Power at 1-dB Compression at 15 GHz

♦

11.5 dB Power Gain at 15 GHz

♦

50% Power-Added Efficiency

LP6836P70

•

DESCRIPTION AND APPLICATIONS

The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility

transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic

range.

It utilizes a 0.25

µm

x 360

µm

Schottky barrier gate, defined by electron-beam

photolithography.

Typical applications include pre-drivers in commercial wireless infrastructure and radio link high-

performance power amplifiers.

•

ELECTRICAL SPECIFICATIONS @ T

Ambient

= 25°C*

Parameter

Saturated Drain-Source Current**

Power at 1-dB Compression

Power Gain at 1-dB Compression

Power-Added Efficiency

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

Gate-Source Breakdown

Voltage Magnitude

Symbol

DSS

P-1dB

G-1dB

PAE

MAX

GSO

BDGS

Test Conditions

= 2 V; V

= 0 V

= 5 V; I

= 50% I

DSS

= 5 V; I

= 50% I

DSS

= 5 V; I

= 50% I

DSS

;

= 20 dBm

= 2 V; V

= 1 V

= 2 V; V

= 0 V

= -5 V

= 2 V; I

= 2 mA

= mA

-0.25

-11

Min

10.5

190

-0.8

-15

-2.0

Typ

Max

125

Units

dBm

µA

Gate-Drain Breakdown

BDGD

= 2 mA

-12

-16

Voltage Magnitude

*frequency=15 GHz, unless otherwise noted

**Formerly binned as: LP6836P70-1 = 80-95 mA, LP6836P70–2 = 96-105 mA, and LP6836P70-3 = 106-125 mA

Phone:

(408) 988-1845

Fax:

(408) 970-9950

http://

www.filss.com

Revised:

1/22/01

Email:

sales@filss.com

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