512 Kbit SPI Serial Flash
SST25VF512A
SST25VF512A512Kb Serial Peripheral Interface (SPI) flash memory
Data Sheet
FEATURES:
• Single 2.7-3.6V Read and Write Operations
• Serial Interface Architecture
– SPI Compatible: Mode 0 and Mode 3
• 33 MHz Max Clock Frequency
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Read Current: 7 mA (typical)
– Standby Current: 8 µA (typical)
• Flexible Erase Capability
– Uniform 4 KByte sectors
– Uniform 32 KByte overlay blocks
• Fast Erase and Byte-Program:
– Chip-Erase Time: 70 ms (typical)
– Sector- or Block-Erase Time: 18 ms (typical)
– Byte-Program Time: 14 µs (typical)
• Auto Address Increment (AAI) Programming
– Decrease total chip programming time over
Byte-Program operations
• End-of-Write Detection
– Software Status
• Hold Pin (HOLD#)
– Suspends a serial sequence to the memory
without deselecting the device
• Write Protection (WP#)
– Enables/Disables the Lock-Down function of the
status register
• Software Write Protection
– Write protection through Block-Protection bits in
status register
• Temperature Range
– Commercial: 0°C to +70°C
– Industrial: -40°C to +85°C
– Extended: -20°C to +85°C
• Packages Available
– 8-lead SOIC 150 mil body width
– 8-contact WSON (5mm x 6mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
SST’s serial flash family features a four-wire, SPI-compati-
ble interface that allows for a low pin-count package occu-
pying less board space and ultimately lowering total system
costs. SST25VF512A SPI serial flash memory is manufac-
tured with SST’s proprietary, high-performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST25VF512A device significantly improves perfor-
mance, while lowering power consumption. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash memory technologies. The SST25VF512A
device operates with a single 2.7-3.6V power supply.
The SST25VF512A device is offered in both 8-lead SOIC
and 8-contact WSON packages. See Figure 1 for the pin
assignments.
©2006 Silicon Storage Technology, Inc.
S71264-02-000
1/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
512 Kbit SPI Serial Flash
SST25VF512A
Data Sheet
F
UNCTIONAL
B
LOCK
D
IAGRAM
Address
Buffers
and
Latches
X - Decoder
SuperFlash
Memory
Y - Decoder
Control Logic
I/O Buffers
and
Data Latches
Serial Interface
1264 B1.0
CE#
SCK
SI
SO
WP#
HOLD#
©2006 Silicon Storage Technology, Inc.
S71264-02-000
1/06
2
512 Kbit SPI Serial Flash
SST25VF512A
Data Sheet
PIN DESCRIPTION
CE#
SO
WP#
VSS
1
2
8
7
VDD
HOLD#
SCK
SI
CE#
SO
WP#
VSS
1
8
VDD
HOLD#
SCK
SI
2
7
Top View
3
4
6
5
1264 08-soic P1.0
3
Top View
6
4
5
1264 08-wson P2.0
8-
LEAD
SOIC
8-
CONTACT
WSON
FIGURE 1: P
IN
A
SSIGNMENTS
TABLE 1: P
IN
D
ESCRIPTION
Symbol Pin Name
SCK
Serial Clock
Functions
To provide the timing of the serial interface.
Commands, addresses, or input data are latched on the rising edge of the clock input, while output
data is shifted out on the falling edge of the clock input.
To transfer commands, addresses, or data serially into the device.
Inputs are latched on the rising edge of the serial clock.
To transfer data serially out of the device.
Data is shifted out on the falling edge of the serial clock.
The device is enabled by a high to low transition on CE#. CE# must remain low for the duration of
any command sequence.
The Write Protect (WP#) pin is used to enable/disable BPL bit in the status register.
To temporarily stop serial communication with SPI flash memory without resetting the device.
To provide power supply (2.7-3.6V).
T1.0 1264
SI
SO
CE#
WP#
HOLD#
V
DD
V
SS
Serial Data
Input
Serial Data
Output
Chip Enable
Write Protect
Hold
Power Supply
Ground
©2006 Silicon Storage Technology, Inc.
S71264-02-000
1/06
3
512 Kbit SPI Serial Flash
SST25VF512A
Data Sheet
PRODUCT IDENTIFICATION
TABLE 2: P
RODUCT
I
DENTIFICATION
Address
Manufacturer’s ID
Device ID
SST25VF512A
00001H
48H
T2.0 1264
DEVICE OPERATION
The SST25VF512A is accessed through the SPI (Serial
Peripheral Interface) bus compatible protocol. The SPI bus
consist of four control lines; Chip Enable (CE#) is used to
select the device, and data is accessed through the Serial
Data Input (SI), Serial Data Output (SO), and Serial Clock
(SCK).
The SST25VF512A supports both Mode 0 (0,0) and Mode
3 (1,1) of SPI bus operations. The difference between the
two modes, as shown in Figure 2, is the state of the SCK
signal when the bus master is in Stand-by mode and no
data is being transferred. The SCK signal is low for Mode 0
and SCK signal is high for Mode 3. For both modes, the
Serial Data In (SI) is sampled at the rising edge of the SCK
clock signal and the Serial Data Output (SO) is driven after
the falling edge of the SCK clock signal.
Data
BFH
00000H
MEMORY ORGANIZATION
The SST25VF512A SuperFlash memory array is orga-
nized in 4 KByte sectors with 32 KByte overlay blocks.
CE#
MODE 3
MODE 3
MODE 0
SCK
SI
SO
MODE 0
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
DON'T CARE
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
MSB
1264 F02.0
HIGH IMPEDANCE
FIGURE 2: SPI P
ROTOCOL
©2006 Silicon Storage Technology, Inc.
S71264-02-000
1/06
4
512 Kbit SPI Serial Flash
SST25VF512A
Data Sheet
Hold Operation
HOLD# pin is used to pause a serial sequence underway
with the SPI flash memory without resetting the clocking
sequence. To activate the HOLD# mode, CE# must be in
active low state. The HOLD# mode begins when the SCK
active low state coincides with the falling edge of the
HOLD# signal. The HOLD mode ends when the HOLD#
signal’s rising edge coincides with the SCK active low state.
If the falling edge of the HOLD# signal does not coincide
with the SCK active low state, then the device enters Hold
mode when the SCK next reaches the active low state.
Similarly, if the rising edge of the HOLD# signal does not
coincide with the SCK active low state, then the device
exits in Hold mode when the SCK next reaches the active
low state. See Figure 3 for Hold Condition waveform.
Once the device enters Hold mode, SO will be in high-
impedance state while SI and SCK can be V
IL
or V
IH
.
If CE# is driven active high during a Hold condition, it resets
the internal logic of the device. As long as HOLD# signal is
low, the memory remains in the Hold condition. To resume
communication with the device, HOLD# must be driven
active high, and CE# must be driven active low. See Figure
18 for Hold timing.
SCK
HOLD#
Active
Hold
Active
Hold
Active
1264 F03.0
FIGURE 3: H
OLD
C
ONDITION
W
AVEFORM
Write Protection
The SST25VF512A provides software Write protection.
The Write Protect pin (WP#) enables or disables the lock-
down function of the status register. The Block-Protection
bits (BP1, BP0, and BPL) in the status register provide
Write protection to the memory array and the status regis-
ter. See Table 5 for Block-Protection description.
Write Protect Pin (WP#)
The Write Protect (WP#) pin enables the lock-down func-
tion of the BPL bit (bit 7) in the status register. When WP#
is driven low, the execution of the Write-Status-Register
(WRSR) instruction is determined by the value of the BPL
bit (see Table 3). When WP# is high, the lock-down func-
tion of the BPL bit is disabled.
TABLE 3: C
ONDITIONS TO EXECUTE
W
RITE
-S
TATUS
-
R
EGISTER
(WRSR) I
NSTRUCTION
WP#
L
L
H
BPL
1
0
X
Execute WRSR Instruction
Not Allowed
Allowed
Allowed
T3.0 1264
©2006 Silicon Storage Technology, Inc.
S71264-02-000
1/06
5
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