Description
The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within ±2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.
Devices are available with active areas from
0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q-
9858A and AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200°C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.
Large-Area InGaAs
Photodiodes
C30619, C30641, C30642, C30665
EVERYTHING
IN A
NEW
LIGHT.
Features
• 0.5, 1.0, 2.0, and 3.0 mm diameters
• High responsivity from 850 nm to 1550 nm
• High shunt resistance, low dark current
• TE-cooled package options
• Low capacitance for fast response times
Applications
• Power meters
• Fiber identifiers
• Laser burn-in racks
• Near infrared instrumentation
•F
.T.I.R. spectroscopy
C30619, C30641, C30642, C30665
Package Options
TE-Cooled Devices: Large-area detectors are available
mounted on a 1-stage or 2-stage thermoelectric (TE) cooler.
Cooling increases shunt resistance (see Figure 2) thereby
reducing noise for increased sensitivity. Typical detector
temperature is -10°C with a 1-stage TE cooler or -35°C
using a 2-stage cooler. A TE-cooler option can be specified
by adding the extension -TC (1-stage cooler) or -DTC (2-
stage cooler) to the standard part number (see ordering
guide). More information is available from the "TC-Series
Cooled Photodiodes" datasheet from PerkinElmer
Optoelectronics Canada.
Detector and Pre-Amplifier: Large-area InGaAs detectors are
also available integrated with a preamplifier and TE-cooler. The
HTE-series features large-area InGaAs detectors with a high
gain hybrid transimpedence amplifier mounted on a 2-stage TE
cooler. TE-cooling maximizes sensitivity and stabilizes op-amp
offset and output characteristics. This provides an easy-to-use
high sensitivity detector platform optimized for good temperature
stability over a wide operating temperature range. More
information is available from the HTE-series datasheet. The
standard HTE-2642 incorporates a C30642E chip.
Specifications (at VR = VOP (typical), 22°C)
Parameter
Min
Active Diameter
Responsivity At 850 nm
0.10
At 1300 nm
0.80
At 1550 nm
0.85
1
Shunt Resistance (VR = 10 mV)
10
Dark Current
Spectral Noise Current (10 kHz, 1.0 Hz)
Capacitance At VR = 0V
At VR = VOP
Bandwidth (-3 dB, RL = 50Ω)
Linearity
2
Available package types
C30619
Typ
0.5
0.20
0.90
0.95
250
1
0.02
20
8
350
> +13
D2, D14
C30641
Typ
1.0
0.20
0.90
0.95
50
5
0.04
100
40
75
> +13
D2, D14
Units
Max
mm
A/W
A/W
A/W
MΩ
nA
pA/√Hz
pF
pF
MHz
dBm
-
Max
Min
0.10
0.80
0.85
5
20
0.10
25
10
50
0.15
125
50
Operating Ratings
Parameter
Min
Operating Voltage
Breakdown Voltage
Maximum Forward Current
Maximum Photocurrent
Power Dissipation
Storage Temperature
Operating Temperature
0
20
C30619
Typ
5
80
C30641
Typ
2
80
Units
Max
5
10
100
100
125
85
V
V
mA
mA
mW
°C
°C
Max
10
10
100
100
125
85
Min
0
20
-60
-40
-80
-40
Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ).
C30619, C30641, C30642, C30665
Figure 1. Typical Responsivity vs. Wavelength.
Figure 2. Typical Shunt Resistance as a Function of Temperature.
Specifications (at VR = VOP (typical), 22°C)
Parameter
Min
Active Diameter
Responsivity At 850 nm
0.10
At 1300 nm
0.80
At 1550 nm
0.85
1
Shunt Resistance (VR = 10 mV)
2
Dark Current
Spectral Noise Current (10 kHz, 1.0 Hz)
Capacitance At VR = 0V
At VR = 2.0V (typical)
Bandwidth (-3 dB, RL = 50Ω)
Linearity
2
Available package types
C30642
Typ
2.0
0.20
0.90
0.95
25
10
3
0.03
300
150
20
+11
D15
C30665
Typ
3.0
0.20
0.90
0.95
10
25
3
0.04
1000
400
3.0
+11
D15
Units
Max
mm
A/W
A/W
A/W
MΩ
nA
pA/√Hz
pF
pF
MHz
dBm
-
Max
Min
0.10
0.80
0.85
1
0.15
500
0.20
1250
Operating Ratings
Parameter
Min
Operating Voltage
Breakdown Voltage
Maximum Forward Current
Maximum Photocurrent
Power Dissipation
Storage Temperature
Operating Temperature
C30642
Typ
0
50
C30665
Typ
0
50
Units
Max
5
10
100
250
125
85
V
V
mA
mA
mW
°C
°C
Max
5
Min
15
10
10
100
250
125
85
-60
-40
-80
-40
Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ).
Note 3. At VR = 2.0V
C30619, C30641, C30642, C30665
Figure 3. Typical Capacitance vs. Operating Voltage.
Figure 4. Typical Dark Current vs. Operating Voltage.
Wavelength
(nm)
850
1060
1300
1550
1650
Temperature
Coefficient
1
(%/°C)
-0.121
0.039
0.012
0.009
(20°C to 85°C)
0.085
(-40°C to 20°C)
1.287
Note1:
Measured from -40°C to +85°C except
1650nm, as indicated.
Figure 5. Typical Responsivity Temperature Coefficients.
Figure 6. Typical Responsivity Scan of a 1mm Photodiode.
Figure 7. Package D2: TO-18 Low Profile with Silicon Window. To special order.
Figure 8. Package D-14: TO-18 with Glass Window.
C30619, C30641, C30642, C30665
Figure 9. Package D15: TO-5 with Glass Window.
Ordering Guide
C30
#
#
#
L
- X
X
X
TE-Cooler Option:
TC:
DTC:
1-stage TE cooler
2-stage TE cooler
(Not yet available for C30665)
Silicon
Glass
(See below for availability)
0.5mm diameter
1.0mm diameter
2.0mm diameter
3.0mm diameter
Window Option:
E:
G:
Chip Type:
619:
641:
642:
665:
Device Package Availability
Window
Option
E
G
Window
Type
C30619
Silicon
Glass
D2
1
D14
Package Type
C30641 C30642
D2
1
D14
-
D15
C30665
-
D15
Note 1: Special Order
For more information e-mail us at opto@perkinelmer.com or visit our web site at www.perkinelmer.com/opto
PerkinElmer Optoelectronics
22001 Dumberry Road,
Vaudreuil, Québec
Canada J7V 8P7
Phone: (450) 424-3300
Fax: (450) 424-3411
All values are nominal; specifications subject to change without notice.
©2000 PerkinElmer, Inc.
All rights reserved.
0700
is a registered trademark of PerkinElmer, Inc.
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