PNP TRANSISTOR
-0.5A
8550S
Power Dissipation: 0.625W
Collector Current: -0.5A
Collector-Base Voltage: -45V
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
（
Ta=25
℃）
PARAMETERS
SYMBOL MIN TYP MAX UNIT
CONDITION
Collector-Emitter Breakdown Voltage BVceo
V
Ic=-0.1mA
-25
Collector-Base Breakdown Voltage
BVcbo
-45
V
Ic=-100
u
A
Emitter-Base Breakdown Voltage
BVebo
V
-5
Ie=-100
μ
A
Collector-Base Leakage
Icbo
-0.1
uA
Vcb=-40V
Collector-Emitter Leakage
Iceo
-0.1
uA
Vce=-20V
Emitter-Base Leakage
Iebo
-0.1
uA
Veb=-5V
Collector-Emitter Saturation Voltage Vce(sat
)
-0.6
V
Ic=-500mA, Ib=-50mA
Base-Emiiter Saturation Voltage
Vbe(sat)
-1.2
V
Ic=-500mA, Ib=-50mA
DC Current Gain
Hfe1
85
Vce=-1V,Ic=-50mA
300
Hfe2
50
Vce=-1V,Ic=-500mA
Collector Current
Ic
-0.5
A
Peak Collector Current
Icp
-8 A(Pulse)
Current Gain Bandwidth
f
T
MHz
Vcb=-6V, Ic=-20mA
150
Output Capacitance
Cob
32
pF
Vcb=-20V,Ie=0,f=1MHz
Power Dissipation
Pc
0.625
W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55
150
℃
Hfe1 Classification
Rank
Range
B
85-160
C
120-200
D
160-300
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