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TSM4416DCSRL

Description
30v dual N-channel mosfet
CategoryDiscrete semiconductor    The transistor   
File Size162KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM4416DCSRL Overview

30v dual N-channel mosfet

TSM4416DCSRL Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresULTRA-LOW RESISTANCE
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)8.5 A
Maximum drain-source on-resistance0.024 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Preliminary
TSM4416D
30V Dual N-Channel MOSFET
SOP-8
Pin Definition:
1. Source 1
8. Drain
2. Gate 1
7. Drain
3. Source 2
6. Drain
4. Gate 2
5. Drain
1
1
2
2
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
30
19 @ V
GS
= 10V
28 @ V
GS
= 4.5V
I
D
(A)
8.5
6
Features
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
Load Switch
PWM Application
Ordering Information
Part No.
TSM4416DCS RL
Package
SOP-8
Packing
2.5Kpcs / 13” Reel
Dual N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Ta = 25 C
Ta = 75 C
Limit
30
20
8.5
40
2.6
2.5
1.6
+150
- 55 to +150
Unit
V
V
A
A
A
W
o
o
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
10 sec.
Symbol
JF
JA
Limit
25
50
Unit
o
o
C/W
C/W
1/4
Version: Preliminary
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