TN0106
TN0110
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
60V
100V
†
R
DS(ON)
(max)
3.0Ω
3.0Ω
I
D(ON)
(min)
2A
2A
V
GS(th)
(max)
2.0V
2.0V
Order Number / Package
TO-92
TN0106N3
TN0110N3
Die
†
—
TN0110ND
7
MIL visual screening available
Features
s
Low threshold — 2.0V max.
s
High input impedance
s
Low input capacitance — 50pF typical
s
Fast switching speeds
s
Low on resistance
s
Free from secondary breakdown
s
Low input and output leakage
s
Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
s
Logic level interfaces – ideal for TTL and CMOS
s
Solid state relays
s
Battery operated systems
s
Photo voltaic drives
s
Analog switches
s
General purpose line drivers
s
Telecom switches
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
SGD
TO-92
7-35
TN0106/TN0110
Thermal Characteristics
Package
TO-92
I
D
(continuous)*
0.5A
I
D
(pulsed)
2.0A
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
0.5A
I
DRM
2.0A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
TN0110
TN0106
Min
100
60
0.6
-3.2
2.0
-5.0
100
10
500
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
0.75
2.0
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
225
1.4
3.4
2.0
1.6
0.6
400
50
25
4.0
2.0
3.0
6.0
3.0
1.0
400
60
35
8.0
5.0
5.0
7.0
6.0
1.5
V
ns
I
SD
= 0.5A, V
GS
= 0V
I
SD
= 0.5A, V
GS
= 0V
ns
V
DD
= 25V
I
D
= 1.0A
R
GEN
= 25Ω
pF
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
4.5
3.0
1.1
Ω
%/°C
m
Ω
µA
A
V
mV/°C
nA
V
GS
= V
DS
, I
D
= 0.5mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 250mA
V
GS
= 10V, I
D
= 500mA
I
D
= 0.5A, V
GS
= 10V
V
DS
= 25V, I
D
= 500mA
Typ
Max
Unit
V
Conditions
I
D
= 1mA, V
GS
= 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
10%
t
(ON)
t
d(ON)
V
DD
OUTPUT
0V
90%
90%
t
r
t
(OFF)
t
d(OFF)
t
F
PULSE
GENERATOR
R
gen
V
DD
R
L
OUTPUT
D.U.T.
10%
10%
INPUT
7-36
TN0106/TN0110
Typical Performance Curves
Output Characteristics
5
5
Saturation Characteristics
4
4
V
GS
= 10V
I
D
(amperes)
V
GS
= 10V
8V
2
I
D
(amperes)
3
3
8V
2
6V
6V
1
1
4V
2V
0
10
20
30
40
50
4V
2V
0
2
4
6
8
10
0
0
V
DS
(volts)
Transconductance vs. Drain Current
0.5
10
V
DS
(volts)
Power Dissipation vs. Case Temperature
7
T
A
= -55°C
0.4
8
T
A
= 25°C
G
FS
(siemens)
T
A
= 150°C
0.2
P
D
(watts)
0.3
6
4
0.1
2
V
DS
= 25V
0
0
.6
1.2
1.8
2.4
3.0
0
TO-92
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
10
1.0
T
C
(
°
C)
Thermal Response Characteristics
T
C
= 25°C
TO-92 (pulsed)
Thermal Resistance (normalized)
0.8
I
D
(amperes)
1.0
0.6
TO-92 (DC)
0.1
0.4
0.2
TO-92
T
C
= 25°C
P
D
= 1W
0.01
1
10
100
1000
0
0.001
0.01
0.1
1
10
V
DS
(volts)
t
p
(seconds)
7-37
TN0106/TN0110
Typical Performance Curves
BV
DSS
Variation with Temperature
1.3
5.0
On-Resistance vs. Drain Current
V
GS
= 5V
V
GS
= 10V
1.2
4.0
BV
DSS
(normalized)
1.1
R
DS(ON)
(ohms)
3.0
1.0
2.0
0.9
1.0
0.8
-50
0
50
100
150
0
0
1.0
2.0
3.0
4.0
5.0
T
j
(
°
C)
Transfer Characteristics
3.0
1.4
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.4
V
DS
= 25V
2.4
T
A
= -55°C
1.2
V
(th)
@ 0.5mA
1.2
I
D
(amperes)
25°C
1.8
1.0
150°C
1.2
R
DS(ON)
@ 10V, 0.5A
1.0
0.8
0.8
0.6
0.6
0.6
0
0.4
0
2
4
6
8
10
-50
0
50
100
150
0.4
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
(
°
C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
75
V
DS
= 10V
55pF
C (picofarads)
V
GS
(volts)
40V
6
C
ISS
50
4
C
OSS
25
2
C
RSS
0
0
10
20
30
40
0
0
1.0
50pF
2.0
3.0
4.0
5.0
V
DS
(volts)
Q
G
(nanocoulombs)
7-38
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
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