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TN1215-800G

Description
scr
CategoryAnalog mixed-signal IC    Trigger device   
File Size65KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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TN1215-800G Overview

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TN1215-800G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codenot_compliant
Other featuresHIGH RELIABILITY
Shell connectionANODE
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage1.3 V
Maximum holding current30 mA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Maximum leakage current0.005 mA
Humidity sensitivity level1
On-state non-repetitive peak current146 A
Number of components1
Number of terminals2
Maximum on-state current12000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Certification statusNot Qualified
Maximum rms on-state current12 A
Maximum repetitive peak off-state leakage current5 µA
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountYES
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Trigger device typeSCR
®
TN1215-G
SCR
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
DESCRIPTION
The TN1215 series of Silicon Controlled Rectifiers
uses a high performance glass passivated tech-
nology.
This SCR is designed for power supplies up to
400Hz on resistive or inductive load.
A
A
K
G
D
2
PAK
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
I
T(AV)
I
TSM
Parameter
RMS on-state current
(180
°
conductionangle)
Average on-state current
(180° conductionangle)
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I
2
t
dI/dt
T
stg
T
j
Tl
I
2
t Value for fusing
Critical rate of rise of on-state current
dI
G
/dt = 1 A/µs.
I
G
= 100 mA
Storage junction temperature range
Operating junction temperature range
Maximum temperature for soldering during 10s
Tc= 110°C
Tc= 110°C
tp = 8.3 ms
tp = 10 ms
tp = 10ms
Value
12
8
146
140
98
100
- 40 to + 150
- 40 to + 125
260
A
2
s
A/
µ
s
°
C
°
C
Unit
A
A
A
Symbol
V
DRM
V
RRM
Parameter
Repetitive peak off-state voltage
Tj = 125°C
TN1215-
600G
600
800G
800
Unit
V
January 1998 - Ed: 4
1/5

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