MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
TM55DZ/CZ-M,-H
•
I
T (AV)
•
V
RRM
•
•
•
•
Average on-state current ............
55A
Repetitive peak reverse voltage
........
400/800V
V
DRM
Repetitive peak off-state voltage
........
400/800V
DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
E lectric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93.5
80
2–φ6.5
K2 G2
(DZ)
K
2
G
2
12.5
26
A
1
K
2
CR
1
K
1
CR
2
A
2
K
1
G
1
K1 G1
17.5
20
20
3–M5
(CZ)
Tab#110,
t=0.5
A
1
CR
1
K
1
K
2
K
2
G
2
A
2
CR
2
K
1
G
1
LABEL
6.5
9
21
30
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Voltage class
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Conditions
Ratings
86
Unit
A
A
A
A
2
s
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Single-phase, half-wave 180° conduction, T
C
=86°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125°C
55
1100
5.0
×
10
3
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
100
5.0
0.5
10
5.0
2.0
–40~+125
–40~+125
Charged part to case
Main terminal screw M5
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
T
j
=125°C, V
RRM
applied
T
j
=125°C, V
DRM
applied
T
j
=125°C, I
TM
=165A, instantaneous meas.
T
j
=125°C, V
D
=2/3V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
T
j
=125°C, V
D
=1/2V
DRM
T
j
=25°C, V
D
=6V, R
L
=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Test conditions
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
10
10
1.35
—
3.0
—
100
0.5
0.2
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/
W
°C/
W
MΩ
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4
SURGE (NON-REPETITIVE)
ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
3
7
5
3
2
T
j
=125°C
1200
1000
800
600
400
0.8
1.2
1.6
2.0
2.4
200
1
2 3
5 7 10
20 30
50 70100
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 710
1
0.8
GATE CHARACTERISTICS
V
FGM
=10V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
4
3
2
GATE VOLTAGE (V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
10
1
P
GM
=5.0W
7
5 V
GT
=3.0V
P
G(AV)
=
3
0.50W
2
I
GT
=
10
0
100mA
7
5
T
j
=25°C
3
2
V
GD
=0.25V
–1
10
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
I
FGM
=2.0A
80
AVERAGE ON-STATE POWER
DISSIPATION (W)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
130
120
CASE TEMPERATURE (°C)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
70
60
50
40
30
20
10
0
0
PER SINGLE
ELEMENT
60°
θ=30°
180°
120°
90°
110
100
90
80
70
60
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
10
20
30
40
50
60
70
80
θ=30°
60° 90° 120° 180°
PER SINGLE
ELEMENT
0
10
20
30
40
50
60
70
80
50
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
100
AVERAGE ON-STATE POWER
DISSIPATION (W)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
DC
270°
CASE TEMPERATURE (°C)
PER SINGLE
ELEMENT
130
120
110
100
90
80
70
60
100
50
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
PER SINGLE
ELEMENT
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
80
60
180°
120°
90°
60°
θ=30°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
40
20
θ=30°
60° 90° 180° 270° DC
120°
0
20
40
60
80
100
0
0
20
40
60
80
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
160
140
AVERAGE ON-STATE
POWER DISSIPATION (W)
120
100
80
60
40
20
0
0
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=180°
CASE TEMPERATURE (°C)
120°
90°
60°
30°
130
125
120
115
110
105
100
95
90
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
PER SINGLE
MODULE
θ
θ
360°
120°
180°
θ=30°
60°
90°
PER SINGLE
MODULE
20
40
60
80 100 120 140 160
RESISTIVE,
85 INDUCTIVE
LOAD
80
0 20 40 60
80 100 120 140 160
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
ON-STATE POWER DISSIPATION (W)
(PER SINGLE MODULE)
160
140
120
100
80
60
40
20
0
0
20
40
60
θ=30°
60°
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
120° 180°
90°
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
125
120
115
110
105
100
95
90
85
θ=30°
60° 90° 120°
0
20
40
60
180°
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
80 100 120 140 160
80
80 100 120 140 160
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
ON-STATE POWER DISSIPATION (W)
(PER SINGLE MODULE)
160
140
120
100
80
60
40
20
0
0
20
40
60
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
80 100 120 140 160
60°
θ=30°
90°
120°
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
60
50
0
20
40
60
θ=30°
60°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
90° 120°
80 100 120 140 160
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
Feb.1999
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