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P4KE33A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size108KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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P4KE33A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE33A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-41
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage34.7 V
Minimum breakdown voltage31.4 V
Breakdown voltage nominal value33 V
Shell connectionISOLATED
Maximum clamping voltage45.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.13 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage28.2 V
Maximum reverse current2 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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Index Files: 1099  1801  343  1720  1101  23  37  7  35  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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