TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4
TLP521XGB, TLP521-2XGB, TLP521-4XGB
TLP521X, TLP521-2X, TLP521-4X
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : -
- STD
- G form
-
SMD approved to CECC 00802
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TLP521
2.54
7.0
6.0
1.2
5.08
4.08
1
2
Dimensions in mm
4
3
7.62
4.0
3.0
0.5
13°
Max
0.26
BSI approved - Certificate No. 8001
DESCRIPTION
The TLP521, TLP521-2, TLP521-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio ( 50% min)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High BV
CEO
( 55Vmin )
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
3.0
TLP521-2
0.5
2.54
3.35
1
7.0
6.0
2
3
4
7.62
4.0
3.0
0.5
8
7
6
5
1.2
10.16
9.16
3.0
3.35
0.5
13°
Max
0.26
1
2
3
4
5
7.0
6.0
6
7
8
7.62
13°
Max
0.26
16
15
14
13
12
11
10
9
TLP521-4
2.54
7.62
1.2
20.32
19.32
4.0
3.0
0.5
0.5 3.35
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/4/03
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92546m-AAS/A3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
55V
6V
150mW
200mW
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
55
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
TLP521, TLP521-2, TLP521-4
CTR selection available
BL
GB
GB
Collector-emitter Saturation VoltageV
CE (SAT)
-GB
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Response Time (Rise), tr
Response
Time (Fall), tf
5300
7500
5x10
10
4
3
50
200
100
30
MIN TYP MAX UNITS
1.0
1.15
1.3
10
V
µ
A
TEST CONDITION
I
F
= 10mA
V
R
= 4V
I
C
= 0.5mA
I
E
= 100
µ
A
V
CE
= 20V
5mA I
F
, 5V V
CE
1mA I
F
, 0.4V V
CE
8mA I
F
, 2.4mA I
C
1mA I
F
, 0.2mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 2mA, R
L
= 100
Ω
V
V
nA
100
Coupled
600
600
600
%
%
%
%
V
V
V
RMS
V
PK
Ω
µ
s
µ
s
0.4
0.4
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/4/03
DB92546m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
25
Collector current I
C
(mA)
150
20
15
10
5
0
-30
0
25
50
75
100
125
0
Collector Current vs. Low
Collector-emitter Voltage
T
A
= 25°C
50
40
30
20
10
5
I
F
= 2mA
100
50
0
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage V
CE
( V )
Collector Current vs. Collector-emitter Voltage
50
50
30
Collector current I
C
(mA)
40
30
20
10
0
20
15
10
T
A
= 25°C
50
Forward current I
F
(mA)
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
I
F
= 5mA
I
C
= 1mA
Current transfer ratio CTR (%)
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/4/03
I
F
= 5mA
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
1
2
5
10
20
50
Forward current I
F
(mA)
DB92546m-AAS/A3
Collector-emitter saturation voltage V
CE(SAT)
(V)
V
CE
= 5V
T
A
= 25°C
PCB Design
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