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P4KE22A

Description
UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size64KB,4 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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P4KE22A Overview

UNIDIRECTIONAL, SILICON, TVS DIODE

P4KE6.8 THRU P4KE440CA
T
RANS
Z
ORB
™ TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage -
6.8 to 440 Volts
DO-204AL
Peak Pulse Power
- 400 Watts
FEATURES
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
400W peak pulse power capability with a 10/1000µs
waveform, repetition rate
(duty cycle): 0.01%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less
than 1.0ps from 0 Volts to V
(BR)
for
uni-directional and 5.0ns for bi-directional types
Devices with V
(BR)
≥10V
I
D
are typically I
D
less than 1.0µA
High temperature soldering guaranteed:
265°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
MECHANICAL DATA
Case:
JEDEC DO-204AL molded plastic body over
passivated junction
Terminals:
Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
For uni-directional types the color band denotes
the cathode, which is posititive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.012 ounce, 0.3 gram
Dimensions are in inches and (millimeters)
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use C or CA suffix for types P4KE7.5 thru types P4KE440 (e.g. P4KE7.5CA, P4KE440CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNITS
Peak power dissipation with a 10/1000µs waveform
(NOTE 1, FIG. 1)
P
PPM
I
PPM
P
M(AV)
Minimum 400
SEE TABLE 1
Watts
Amps
Watts
Peak pulse current with a 10/1000µs waveform
(NOTE 1)
Steady state power dissipation at T
L
=75°C
lead lengths 0.375" (9.5mm)
(NOTE 2)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load
(JEDEC Method)
(NOTE 3)
Maximum instantaneous forward voltage at 25A for
unidirectional only
(NOTE 4)
Operating junction and storage temperature range
1.0
I
FSM
40.0
Amps
V
F
T
J
, T
STG
3.5/5.0
-55 to +175
Volts
°C
NOTES:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
(4) V
F
=3.5 Volt max. for devices of V
(BR)
≤220V,
and V
F
=5.0 Volt max. for devices of V
(BR)
>220V
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