IT130A IT130 IT131 IT132
Linear Integrated Systems
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT130 Series
Pin for Pin Compatible
C1
ABSOLUTE MAXIMUM RATINGS NOTE 1
(T
A
= 25°C unless otherwise noted)
I
C
Collector Current
10mA
C2
E1
3
5
E2
B1
2
6
B2
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
-65°C to +200°C
+150°C
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
1
C1
B1
E1
E2
B2
7
C2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS T
A
= 25
°
C (unless otherwise noted)
SYMBOL CHARACTERISTICS
BV
CBO
Collector to Base Voltage
BV
CEO
BV
EBO
BV
CCO
h
FE
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
IT130A
45
45
6.2
60
200
225
V
CE
(SAT) Collector Saturation Voltage
I
EBO
I
CBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Emitter Cutoff Current
Collector Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
0.5
1
1
2
4
10
110
3
IT130
45
45
6.2
60
200
225
0.5
1
1
2
4
10
110
3
IT131
45
45
6.2
60
80
100
0.5
1
1
2
4
10
90
3
IT132
UNITS CONDITIONS
45
MIN. V
I
C
= 10µA I
E
= 0
45
6.2
60
80
100
0.5
1
1
2
4
10
90
3
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
V
nA
nA
pF
pF
nA
MHz
dB
V
V
V
I
C
= 10µA
I
E
= 10µA
I
C
= 10µA
I
C
= 10µA
I
B
= 0
I
C
= 0
I
E
= 0
V
CE
= 5V
NOTE 2
I
C
= 1.0mA V
CE
= 5V
I
C
= 0.5mA I
B
= 0.05mA
I
C
= 0
I
E
= 0
I
E
= 0
V
CC
= 0
V
CC
=
±60V
I
C
= 1mA
V
CE
= 5V
V
EB
= 3V
V
CB
= 45V
V
CB
= 5V
I
C
= 100µA V
CE
= 5V
BW = 200Hz, R
G
= 10 KΩ
f=1KHz
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
IT130A IT130
|V
BE1
-V
BE2
|
Base Emitter Voltage Differential
1
2
∆|(V
BE1
-V
BE2
)|/∆T Base Emitter Voltage Differential
Change with Temperature
|I
B1
- I
B2
|
Base Current Differential
2.5
5
3
5
IT131
3
10
25
IT132
5
20
25
UNITS CONDITIONS
MAX. mV
I
C
= 10
µA
V
CE
= 5V
MAX.
µV/°C
MAX. nA
I
C
= 10
µA
T = -55°C
I
C
= 10
µA
V
CE
= 5V
to
+125°C
V
CE
= 5V
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.100
2 3 4
1
5
8 7 6
P-DIP
0.320
(8.13)
0.290
(7.37)
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
6 LEADS
0.019 DIA.
0.016
0.100
0.500 MIN.
0.050
2 3 4
1
8
5
6
7
SOIC
0.150
(3.81)
0.158
(4.01)
0.100
45°
0.046
0.036
45°
0.048
0.028
0.028
0.034
0.188
(4.78)
0.197
(5.00)
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.228
(5.79)
0.244
(6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10
µA.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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