Linear Integrated Systems
LS358
LOG CONFORMANCE
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
LOG CONFORMANCE
∆re ≤1Ω
from ideal TYP.
C1
C2
E1
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Collector Current
I
C
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
3
5
E2
10mA
B1
2
6
B2
-65°C to +200°C
+150°C
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
1
C1
B1
E1
E2
B2
7
C2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS358
∆re
Log Conformance
1.5
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
h
FE
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Collector-Base Breakdown Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
20
20
6.2
45
100
600
100
600
100
0.5
0.2
0.2
2
2
0.5
200
3
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
UNITS
Ω
V
V
V
V
CONDITIONS
I
C
= 10-100-1000µA
I
C
= 10µA
I
C
= 10µA
I
E
= 10µA
I
C
= 10µA
I
C
= 10µA
I
C
= 100µA
I
C
= 1mA
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
V
CE
= 5V
NOTE 2
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CB
= 15V
V
EB
= 3V
V
CB
= 5V
V
nA
nA
pF
pF
nA
MHz
dB
I
C
= 1mAI
B
= 0.1 mA
I
E
= 0
I
C
= 0
I
E
= 0
V
CC
= 0
V
CC
=
±45V
I
C
= 1mA
I
C
= 100µA
BW = 200Hz
f=1KHz
V
CE
= 5V
V
CE
= 5V
R
G
= 10 KΩ
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS
@ 25°C (unless otherwise noted)
SYMBOL
PARAMETER
LS358
Base Emitter Voltage Differential
0.4
TYP.
|V
BE1
-V
BE2
|
1
MAX.
∆|(V
BE1
-V
BE2
)|/°C
|I
B1
-
I
B2
|
|∆(I
B1
- I
B2
)|/°C
h
FE1
/h
FE2
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
Base Current Differential
Change with Temperature
DC Current Gain Differential
5
TYP.
1
10
5
0.5
TYP.
MAX.
MAX.
MAX.
UNITS CONDITIONS
mV
I
C
= 10
µA
mV
µV/°C
µV/°C
nA
nA/°C
I
C
=
10
µA
I = 10µA
C
C
V
CE
= 5V
V
CE
= 5V
V
V
= 5V
= 5V
T
A
= -55°C to +125°C
CE
CE
I = 10
µA
I = 10µA
C
T
A
= -55°C to +125°C
%
V
CE
= 5V
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.100
2 3 4
1
5
8 7 6
P-DIP
0.320
(8.13)
0.290
(7.37)
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8 C2
7 B2
6 E2
5 N/C
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
6 LEADS
0.019 DIA.
0.016
0.100
0.500 MIN.
0.050
2 3 4
1
8
5
6
7
SOIC
0.150
(3.81)
0.158
(4.01)
0.100
45°
0.046
0.036
45°
0.048
0.028
0.028
0.034
0.188
(4.78)
0.197
(5.00)
C1
B1
E1
N/C
1
2
3
4
8 C2
7 B2
6 E2
5 N/C
0.228
(5.79)
0.244
(6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10
µA.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
Analog electronics
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