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J175

Description
single P-channel jfet switch
CategoryDiscrete semiconductor    The transistor   
File Size125KB,2 Pages
ManufacturerLinear ( ADI )
Websitehttp://www.analog.com/cn/index.html
Environmental Compliance
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J175 Overview

single P-channel jfet switch

J175 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerLinear ( ADI )
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ConfigurationSINGLE
Maximum drain-source on-resistance125 Ω
FET technologyJUNCTION
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature135 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
J/SST174 SERIES
Linear Integrated Systems
FEATURES
Direct Replacement For SILICONIX J/SST174 SERIES
LOW ON RESISTANCE
LOW GATE OPERATING CURRENT
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain Voltage
Gate to Source Voltage
V
GDS
= 30V
V
GSS
= 30V
I
G
= -50mA
350mW
-55 to 150°C
-55 to 135°C
D G S
1 2 3
SINGLE P-CHANNEL
JFET SWITCH
r
DS(on)
85Ω
I
D(off)
= 10pA
J SERIES
TO-92
BOTTOM VIEW
SST SERIES
SOT-23
TOP VIEW
D
S
1
3
2
G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(F)
I
GSS
I
G
I
D(off)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Forward Voltage
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
MIN
30
-0.7
0.01
0.01
-0.01
-1
1
nA
TYP
MAX UNITS
V
CONDITIONS
I
G
= 1µA, V
DS
= 0V
I
G
= -1mA, V
DS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DG
= -15V, I
D
= -1mA
V
DS
= -15V, V
GS
= 10V
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
V
GS(off)
I
DSS
r
DS(on)
CHARACTERISTIC
Gate to Source
Cutoff Voltage
Drain to Source
Saturation Current
Drain to Source
On Resistance
J/SST174
MIN
5
-20
MAX
10
-135
85
J/SST175
MIN
3
-7
MAX
6
-70
125
J/SST176
MIN
1
-2
MAX
4
-35
250
J/SST177
MIN
0.8
-1.5
MAX
2.25
-20
300
UNITS
V
mA
CONDITIONS
V
DS
= -15V, I
D
= -10nA
V
DS
= -15V, V
GS
= 0V
V
GS
= 0V, V
DS
= -0.1V
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

J175 Related Products

J175 J/SST175 J/SST176 J/SST174 J174 J/SST177
Description single P-channel jfet switch single P-channel jfet switch single P-channel jfet switch single P-channel jfet switch single P-channel jfet switch single P-channel jfet switch

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