LS421, LS422, LS423,
LS424, LS425, LS426
Linear Integrated Systems
FEATURES
HIGH INPUT IMPEDANCE
HIGH GAIN
LOW POWER OPERATION
I
G
=0.25pA MAX
gfs=120µmho MIN
V
GS(off)
=2V MAX
S1
G2
G1
3
C
4
5
6
D2
S2
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-65° to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
40V
-V
GSS
-V
DSO
-I
G(f)
Drain to Source Voltage
Gate Forward Current
40V
10mA
400mW @ +125°C
D1
D2
D1
2
S1
1
7
G2
G1
S2
TO-78
BOTTOM VIEW
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
22 X 20 MILS
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS
10
25
40
10
25
40
µV/°C
V
DG
= 10V I
D
= 30µA
|∆V
GS1-2
/∆T| max. Drift vs. Temperature
T
A
=-55°C to +125°C
|V
GS1-2
| max.
V
GS(off)
V
GS
I
G
max.
-I
G
max.
-I
GSS
max.
-I
GSS
max.
SYMBOL
BV
GSS
BV
GGO
Y
fss
Y
fs
I
DSS
Offset Voltage
GATE VOLTAGE
Pinchoff Voltage
Operating Range
Operating
High Temperature
At Full Conduction
High Temperature
10
2.0
1.8
.25
250
1.0
1.0
15
2.0
1.8
.25
250
1.0
1.0
25
2.0
1.8
.25
250
1.0
1.0
10
3.0
2.9
.500
500
3.0
3.0
15
3.0
2.9
.500
500
3.0
3.0
25
3.0
2.9
.500
500
3.0
3.0
mV
V
V
pA
pA
pA
nA
V
DG
=10V
V
DS
=10V
V
DG
=10V
V
DG
=10V
T
A
= +125°C
V
DS
= 0V
T
A
= +125°C
V
GS
= 20V
I
D
= 30µA
I
D
= 1nA
I
D
= 30µA
I
D
= 30µA
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
DRAIN CURRENT
Full Conduction
MIN.
40
40
300
120
60
60
TYP.
60
--
--
200
--
--
MAX.
--
--
1500
350
1000
1800
UNITS
V
V
µmho
µmho
µA
µA
CONDITIONS
V
DS
= 0
I
G
= 1nA
I
G
= 1µA
V
DS
= 10V
V
DG
= 10V
LS421-3
LS424-6
I
D
= 0
V
GS
= 0
I
D
= 30µA
V
DS
= 10V
I
S
= 0
f= 1kHz
f= 1kHz
V
GS
= 0
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
SYMBOL
Y
OSS
Y
OS
CMR
CMR
CHARACTERISTICS
OUTPUT CONDUCTANCE
Full Conduction
Operating
COMMON MODE REJECTION
-20 log |∆V
GS1-2
/∆V
DS
|
-20 log |∆V
GS1-2
/∆V
DS
|
NOISE
Figure
Voltage
CAPACITANCE
Input
Reverse Transfer
MIN.
--
--
TYP.
--
0.1
MAX. UNITS
10
3.0
µmho
µmho
dB
dB
CONDITIONS
V
DS
= 10V
V
DG
= 10V
∆V
DS
= 10 to 20V
∆V
DS
= 5 to 10V
V
DG
= 10V
f= 10Hz
V
DG
= 10V
V
DG
= 10V
I
D
= 30µA
V
GS
= 0
I
D
= 30µA
I
D
= 30µA
I
D
= 30µA
R
G
= 10MΩ
--
--
90
90
--
--
NF
e
n
--
--
--
20
10
1.0
70
dB
nV/√Hz
I
D
= 30µA f= 10Hz
I
D
= 30µA f= 1kHz
V
GS
= 0
V
GS
= 0
f= 1MHz
f= 1MHz
C
ISS
C
RSS
--
--
--
--
3.0
1.5
pF
pF
V
DS
= 10V
V
DS
= 10V
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.100
P-DIP
0.320
(8.13)
0.290
(7.37)
0.405
(10.29)
MAX.
S1 1
D1 2
SS 3
G1 4
8
7
6
5
G2
SS
D2
S2
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
2 3 4
1
5
8 7 6
6 LEADS
0.019 DIA.
0.016
0.100
0.500 MIN.
0.050
2 3 4
1
8
5
6
7
SOIC
0.150
(3.81)
0.158
(4.01)
0.100
45°
0.046
0.036
45°
0.048
0.028
0.028
0.034
0.188
(4.78)
0.197
(5.00)
S1
D1
D1
G1
SS
N/C
G1
1
2
3
4
8
7
6
5
G2
N/C
SS
G2
D2
D2
S2
S2
0.228
(5.79)
0.244
(6.20)
S1
D1
G1
N/C
N/C
G2
D2
S2
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
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