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LB123D: Descriptiontechnical specifications OF npn epitaxial planar transistor; File Size215KB，1 Pages; ManufacturerDC Components; Websitehttp://www.dccomponents.com/

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technical specifications OF npn epitaxial planar transistor

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DC COMPONENTS CO., LTD.

R

LB123D

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for high voltage, high speed switching

circuits, and amplifier applications.

TO-126ML

.163(4.12)

.153(3.87)

.146(3.70)

.136(3.44)

Pinning

1 = Emitter

2 = Collector

3 = Base

.044(1.12)

.034(0.87)

.060(1.52)

.050(1.27)

.148(3.75)

.138(3.50)

o

Absolute Maximum Ratings

(T

A

=25

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pluse)

Total Power Dissipation(T

C

=25 C)

Junction Temperature

Storage Temperature

o

C)

Rating

600

400

8

1

2

30

+150

-55 to +150

Unit

V

A

W

o

.123(3.12)

.113(2.87)

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

C

P

D

T

J

T

STG

.300(7.62)

.290(7.37)

1 2 3

.084(2.12)

.074(1.87)

.056(1.42)

.046(1.17)

.033(0.84)

.027(0.68)

.180

Typ

(4.56)

.090

Typ

(2.28)

Dimensions in inches and (millimeters)

.084(2.14)

.074(1.88)

.591(15.0)

.551(14.0)

.027(0.69)

.017(0.43)

C

Electrical Characteristics

o

Characteristic

(Ratings at 25 C ambient temperature unless otherwise specified)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)1

V

CE(sat)2

V

BE(sat)1

V

BE(sat)2

h

FE1

h

FE2

h

FE3

380µs, Duty Cycle

2%

Min

600

400

8

-

10

6

Typ

-

Max

-

10

0.8

0.9

1.2

1.8

50

-

Unit

V

µA

V

-

Test Conditions

I

C

=1mA, I

E

=0

I

C

=10mA, I

B

=0

I

E

=1mA, I

C

=0

V

CB

=600V, I

E

=0

V

BE

=9V, I

C

=0

I

C

=0.1A, I

B

=10mA

I

C

=0.3A, I

B

=30mA

I

C

=0.1A, I

B

=10mA

I

C

=0.3A, I

B

=30mA

I

C

=0.3A, V

CE

=5V

I

C

=0.5A, V

CE

=5V

I

C

=1A, V

CE

=5V

Collector-Base Breakdown Volatge

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Volatge

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

(1)

Base-Emitter Saturation Voltage

(1)

DC Current Gain

(1)

(1)Pulse Test: Pulse Width

Classification of h

FE1

Rank

Range

B1

10~17

B2

13~22

B3

18~27

B4

23~32

B5

28~37

B6

33~42

B7

38~47

B8

43~50

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