IT124
Linear Integrated Systems
SUPER-BETA
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT124
Pin for Pin Compatible
ABSOLUTE MAXIMUM RATINGS NOTE 1
(T
A
= 25°C unless otherwise noted)
I
C
Collector-Current
10mA
C1
C2
E1
3
5
E2
B1
2
6
B2
Maximum Temperatures
Storage Temperature Range
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
-65°C to +200°C
+150°C
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
1
C1
B1
E1
E2
B2
7
C2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
IT124
Collector-Base Breakdown Voltage
2
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
h
FE
V
CE
(SAT)
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
2
6.2
100
1500
1500
0.5
100
100
2
2
250
100
3
MIN.
MIN.
MIN.
MIN.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
UNITS
V
V
V
V
CONDITIONS
I
C
= 10µA
I
C
= 10µA
I
E
= 10µA
I
C
= 10µA
I
C
= 1µA
I
C
= 10µA
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
V
CE
= 1V
V
CE
= 1V
V
CB
= 1V
V
EB
= 3V
V
CB
= 1V
NOTE 2
V
pA
pA
pF
pF
pA
MHz
dB
I
C
= 1mAI
B
= 0.1 mA
I
E
= 0
I
C
= 0
I
E
= 0
V
CC
= 0
V
CC
=
±50V
V
CE
= 1V
V
CE
= 3V
f=1KHz
I
C
= 100µA
I
C
= 10µA
R
G
= 10 KΩ
BW = 200Hz
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS
@ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
IT124
Base Emitter Voltage Differential
2
|V
BE1
-V
BE2
|
5
∆|(V
BE1
-V
BE2
)|/∆T
|I
B1
- I
B2
|
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
5
15
0.6
TYP.
MAX.
TYP.
MAX.
MAX.
UNITS
mV
mV
µV/°C
µV/°C
nA
CONDITIONS
I
C
= 10
µA
I
C
= 10
µA
T = -55°C
I
C
= 10µA
to
V
CE
= 1V
V
CE
= 1V
+125°C
V
CE
= 1V
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.100
2 3 4
1
5
8 7 6
P-DIP
0.320
(8.13)
0.290
(7.37)
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
6 LEADS
0.019 DIA.
0.016
0.100
0.500 MIN.
0.050
2 3 4
1
8
5
6
7
SOIC
0.150
(3.81)
0.158
(4.01)
0.100
45°
0.046
0.036
45°
0.048
0.028
0.028
0.034
0.188
(4.78)
0.197
(5.00)
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.228
(5.79)
0.244
(6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10
µA.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
51mcu
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