LS846 datasheet, PDF - EEWORLD Datasheet

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LS846: Descriptionlow noise, low leakage single N-channel jfet; CategoryDiscrete semiconductor The transistor; File Size130KB，1 Pages; ManufacturerLinear ( ADI ); Websitehttp://www.analog.com/cn/index.html; Environmental Compliance

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LS846 Overview

low noise, low leakage single N-channel jfet

LS846 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Linear ( ADI )
package instruction	CYLINDRICAL, O-XBCY-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	3 pF
JESD-30 code	O-XBCY-W3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	135 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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LS846

Linear Integrated Systems

FEATURES

ULTRA LOW NOISE

LOW GATE LEAKAGE

ABSOLUTE MAXIMUM RATINGS

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation @ +125 °C

Maximum Currents

Gate Forward Current

Maximum Voltages

Drain to Source

Gate to Source

Gate to Drain

V

DSO

= 60V

V

GSS

= 60V

V

GDS

= 60V

*For equivalent monolithic dual, see LS843 family.

I

G(F)

= 50mA

350mW

-65 to +150 °C

-55 to +135 °C

1

LOW NOISE, LOW LEAKAGE

SINGLE N-CHANNEL JFET

e

n

= 3nV/√Hz

I

G

= 15pA

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

BV

GSS

V

GS(OFF)

V

GS

I

DSS

I

G

I

G

I

GSS

Y

fss

Y

fs

Y

oss

Y

os

NF

e

n

e

n

C

ISS

C

RSS

1.

CHARACTERISTIC

Gate to Source Breakdown Voltage

Gate to Source Pinch-off Voltage

Gate to Source Operating Voltage

Drain to Source Saturation Current

Gate Operating Current

Gate Operating Current Reduced V

DG

Gate to Source Leakage Current

Full Conductance Transconductance

Full Output Conductance

Typical Output Conductance

Noise Figure

Noise Voltage

Common Source Input Capacitance

Common Source Reverse Transfer Cap.

MIN

60

1

0.5

1.5

TYP

MAX UNITS

V

3.5

V

mA

pA

µmho

20

µmho

dB

nV/√Hz

pF

2

0.5

CONDITIONS

V

DS

= 0, I

D

= 1nA

V

DS

= 15V, I

D

= 1nA

V

DS

= 15V, I

D

= 500µA

V

DG

= 15V, V

GS

= 0

V

DG

= 15V, I

D

= 500µA

V

DG

= 3V, I

D

= 500µA

V

DG

= 15V, V

DS

= 0

V

GD

= 15V, V

GS

= 0,

f

= 1kHz

V

DG

= 15V, I

D

= 500µA

V

DG

= 15V, V

GS

= 0

V

DG

= 15V, I

D

= 500µA

V

DS

= 15V, V

GS

= 0, R

G

= 10MΩ,

f

= 100Hz, NBW = 6Hz

V

DS

= 15V, I

D

= 500µA,

f

= 1kHz,

NBW = 1Hz

V

DS

= 15V, I

D

= 500µA,

f

= 10Hz,

NBW = 1Hz

V

DS

= 15V, I

D

= 500µA

5

15

5

15

50

30

100

1500

Typical Conductance Transconductance 1000 1500

0.2

3

7

11

8

3

Absolute maximum ratings are limiting values above which serviceability may be impaired.

Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other

rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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