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J201

Description
high gain N-channel jfet
CategoryDiscrete semiconductor    The transistor   
File Size117KB,2 Pages
ManufacturerLinear ( ADI )
Websitehttp://www.analog.com/cn/index.html
Environmental Compliance
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J201 Overview

high gain N-channel jfet

J201 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerLinear ( ADI )
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ConfigurationSINGLE
FET technologyJUNCTION
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature135 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
J/SST201 SERIES
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES
LOW CUTOFF VOLTAGE
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
Forward Gate Current
Maximum Voltages
Gate to Drain Voltage
Gate to Source Voltage
-40V
-40V
50mA
350mW
-65 to +150 °C
-55 to +135 °C
1
HIGH GAIN
N-CHANNEL JFET
V
GS(off)
1.5V
A
V
= 80 V/V
J SERIES
SST SERIES
SOT-23
TOP VIEW
TO-92
BOTTOM VIEW
D S G
1 2 3
S
D
1
3
2
G
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
GSS
CHARACTERISTIC
Gate to Source
Breakdown Voltage
Gate to Source Cutoff
Voltage
J/SST201, 202
J/SST204
J/SST201
J/SST202
J/SST204
J/SST201
J/SST202
J/SST204
MIN
-40
-25
-0.3
-0.8
-0.3
0.2
0.9
0.2
-2
-2
2
J/SST201, 204
J/SST202
0.5
1
4.5
1.3
6
mS
pF
nV/√Hz
-1.5
-4
2
1
4.5
3
-100
pA
V
GS
= -20V, V
DS
= 0V
V
DG
= 10V, I
D
= 0.1mA
V
DS
= 15V, V
GS
= -5V
V
DS
= 15V, V
GS
= 0V,
f
= 1kHz
V
DS
= 15V, V
GS
= 0V,
f
= 1MHz
V
DS
= 10V, V
GS
= 0V,
f
= 1kHz
mA
V
DS
= 15V, V
GS
= 0V
V
V
DS
= 15V, I
D
= 10nA
TYP
MAX UNITS
CONDITIONS
I
G
= -1µA, V
DS
= 0V
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
g
fs
C
iss
C
rss
e
n
Drain to Source
2
Saturation Current
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Forward
Transconductance
Input Capacitance
Reverse Transfer Capacitance
Noise Voltage
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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