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P4KE130

Description
UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size49KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric View All

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P4KE130 Overview

UNIDIRECTIONAL, SILICON, TVS DIODE

P4KE130 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
Breakdown voltage nominal value130 V
Maximum clamping voltage187 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage105 V
surface mountNO
P4KE SERIES
V
BR
: 6.8 - 440 Volts
P
PK
: 400 Watts
FEATURES :
* 400W surge capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time : typically less
then 1.0 ps from 0 volt to V
BR(min.)
* Typical I
R
less then 1 A above 10V
TRANSIENT VOLTAGE
SUPPRESSOR
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end except Bipolar.
* Mounting position : Any
* Weight : 0.339 gram
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For bi-directional use C or CA Suffix
Electrical characteristics apply in both directions
MAXIMUM RATINGS
Peak Power Dissipation at Ta = 25 °C, Tp=1ms (Note1)
Steady State Power Dissipation at TL = 75 °C
Lead Lengths 0.375", (9.5mm) (Note 2)
Peak Forward Surge Current, 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
(JEDEC Method) (Note 3)
Operating and Storage Temperature Range
Note :
PP
K
Minimum 400
Watts
PD
1.0
Watt
IF M
S
TJ, TS G
T
40
- 65 to + 175
Amps.
°C
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