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P4KE13

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size108KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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P4KE13 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE

P4KE13 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-41
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage14.3 V
Minimum breakdown voltage11.7 V
Breakdown voltage nominal value13 V
Shell connectionISOLATED
Maximum clamping voltage19 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.13 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10.5 V
Maximum reverse current2 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Index Files: 17  561  1545  1972  2353  1  12  32  40  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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