FP2189
1-Watt HFET
The Communications Edge
TM
Product Information
Product Features
50 – 4000 MHz
+30 dBm P1dB
+43 dBm Output IP3
High Drain Efficiency
18.5 dB Gain @ 900 MHz
Lead-free/Green/
RoHS-compliant
SOT-89 Package
•
MTTF >100 Years
•
•
•
•
•
•
Product Description
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +43 dBm output IP3
performance and an output power of +30 dBm at 1-dB
compression, while providing 18.5 dB gain at 900 MHz.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP2189 has an associated MTTF of
greater than 100 years at a mounting temperature of 85
°C
and is available in both the standard SOT-89 package and
the
environmentally-friendly
lead-free/green/RoHS-
compliant and green SOT-89 package. All devices are
100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
•
•
•
•
•
•
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
Specifications
DC Parameter
Saturated Drain Current, I
dss
Transconductance, G
m
Pinch Off Voltage, V
p (2)
(1)
Typical Performance
(5)
Units Min
mA
mS
V
445
Typ
615
280
-2.1
Max
705
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(4)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dB
dBm
Typical
915 1960 2140 2450
18.7 15.6 14.4 13.0
21
14.6
23
26
8.3
12
11.5
9.6
+30.2 +30.4 +30.6 +31.2
+42.8 +43.5 +43.9 +45.3
4.5
3.4
4.5
+24.5 +23.8
+22.2
RF Parameter
(3)
Operational Bandwidth
Test Frequency
Small Signal Gain
SS Gain (50
Ω,
unmatched)
Maximum Stable Gain
Output P1dB
Output IP3
(4)
Noise Figure
Drain Bias
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
50
Typ
800
18.5
Max
4000
15
24
+30
+43
4.5
+8V @ 250 mA
21
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage
Drain Current
V
mA
+8
250
5. Typical parameters represent performance in a tuned application circuit.
1. I
dss
is measured with V
gs
= 0 V, V
ds
= 3 V.
2. Pinch-off voltage is measured when I
ds
= 2.4 mA.
3. Test conditions unless otherwise noted: T = 25 ºC, V
DS
= 8 V, I
DQ
= 250 mA in an application circuit
with Z
L
= Z
LOPT
, Z
S
= Z
SOPT
(optimized for output power).
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V
dg
Junction Temperature
Rating
-40 to +85
°C
-55 to +125
°C
4.0 W
6 dB above Input P1dB
+16 V
+220
°C
Ordering Information
Part No.
FP2189-G
FP2189-PCB900S
FP2189-PCB1900S
FP2189-PCB2140S
Description
1 -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 package)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 12
October 2006
FP2189
1-Watt HFET
The Communications Edge
TM
Product Information
Typical Device Data
S-Parameters (V
DS
= +8 V, I
DS
= 250 mA, T = 25
°C,
calibrated to device leads)
S11
1.0
6
0.
6
0.
S22
1.0
30
0.8
0 .8
S21 and Maximum Stable Gain
S21
MSG
S21, MSG (dB)
0.
2
0.
4
Swp Max
6GHz
2.
0
Swp Max
6GHz
2.
0
5
4
3
0
3.
0
4.
1 0.0
10.0
2
- 0.
-4
.0
- 5.
0
2
-0 .
2
.4
-0
.4
-0
.0
-2
-0
.6
- 0.8
-1.0
-0.8
0
1
2
Note:
Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines.
The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device.
Freq (MHz)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
S11 (mag)
S11 (ang)
S21 (mag)
S21 (ang)
S12 (mag)
S12 (ang)
S22 (mag)
0.995
-9.21
15.562
173.61
0.004
82.89
0.261
0.963
-43.33
14.312
151.51
0.017
65.62
0.263
0.906
-78.54
11.961
128.91
0.029
49.26
0.276
0.876
-104.31
9.735
111.97
0.036
34.34
0.288
0.851
-123.00
8.046
98.87
0.040
24.98
0.300
0.836
-138.30
6.765
86.96
0.042
17.12
0.315
0.834
-149.84
5.864
77.58
0.043
12.50
0.330
0.825
-159.46
5.090
68.80
0.043
8.49
0.346
0.827
-168.49
4.556
60.62
0.044
4.05
0.368
0.827
-176.39
4.049
52.41
0.043
0.16
0.378
0.826
177.53
3.660
45.61
0.043
-1.33
0.394
0.830
171.26
3.336
38.11
0.043
-3.95
0.416
0.829
165.08
3.054
30.79
0.043
-6.46
0.427
0.828
159.79
2.779
24.59
0.043
-6.43
0.445
0.836
154.28
2.596
18.29
0.043
-8.81
0.465
0.838
149.19
2.422
11.82
0.044
-8.46
0.478
0.839
144.09
2.276
5.12
0.044
-8.40
0.498
Device S-parameters are available for download off of the website at: http://www.wj.com
S22 (ang)
-10.68
-46.04
-81.01
-103.33
-119.07
-130.86
-139.51
-147.68
-153.90
-160.68
-166.28
-171.43
-177.48
177.09
172.17
166.87
160.44
Load-Pull Data at 1.96 GHz
(V
ds
= 8 V, I
ds
= 250 mA, 25 °C, Z
S
= 50
Ω)
1.96 GHz
r 9.0 Ohm
x 11.0 Ohm
0.
4
Output IP3
1.0
2.
0
6
0.
P1dB
Swp Max
6GHz
1.0
0
3.
1.96 GHz
r 22 Ohm
x 2 Ohm
0.
4
0.
6
Swp Max
6GHz
2.
0
0 .8
0 .8
0
3.
0
4.
0. 2
0
4.
50
48
10.0
5 .0
5 .0
10.0
10.0
1 0. 0
0.4
0.6
0.8
1.0
2.0
0.2
0.4
0.6
0.8
1.0
4.0
5.0
2.0
3.0
0
46
45
- 10. 0
30
- 10 .0
29
-4
.0
- 5.
0
2
-0 .
2
-0 .
28
5.0
0.2
3.0
4.0
47
0
.4
-0
.4
-0
.0
-2
-0
.6
-0
.6
- 0.8
.0
-2
Swp Min
1e-009GHz
Swp Min
1e-009GHz
- 0.8
Maximum IP3 = +51 dBm at Z
L
= 9 + j11
Ω
-1.0
Maximum P1dB = +30.9 dBm at Z
L
= 22 + j2
Ω
Specifications and information are subject to change without notice.
Page 2 of 12
October 2006
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
-1.0
-1.0
3
Frequency (GHz)
4
5
6
Swp Min
0.01GHz
-0
.6
.0
-2
0
1
Swp Min
0.01GHz
-4
.0
-5.
0
1
-1 0.0
-3
.0
-3
.0
- 10.
0
10
2
-3
.0
3
10.0
0.2
0.6
0.8
1.0
2.0
5.0
0.2
0.6
0.8
1.0
2.0
3.0
4.0
0.4
3.0
4.0
0.4
5.0
0
0
0. 2
20
5 .0
0.
4
6
0
3.
6
5
4
0
4.
5.0
10 .0
-4
.0
- 5.
0
-3
.0
0. 2
FP2189
1-Watt HFET
The Communications Edge
TM
Product Information
Application Circuit: 870 – 960 MHz (FP2189-PCB900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I
ds
= 250 mA, 25
°
C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+15 dBm / tone, 1 MHz spacing)
MHz
dB
dB
dB
dBm
dBm
dB
dBm
870
18.9
-24
-7.6
+30.0
915
18.7
-21
-8.3
+30.2
+42.8
960
18.4
-12
-9.6
+30.0
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
4.2
4.5
+24.5
4.5
CAP
CAP
CAP
ID= C10
ID= C3
ID= C4
C=100 pF C= 1000 pF C=DNP pF
-Vgg
Vds =8V @ 250 mA
CAP
ID=C11
C=1e 5 p F
CAP
ID=C12
C=DNP pF
RES
ID= R1
R=100 Ohm
CAP
ID=C 8
C=1000 pF
CAP
ID=C 7
C=100 pF
CAP
ID=C 6
C=DNP pF
IN D
ID=L3
L=82 nH
CAP
ID=C13
C=DNP p F
CAP
ID=C 2
C=DNP p F
SUBCKT
ID=Q1
NET="FP2189"
2
PORT
P=1
Z=50 Ohm
CAP
ID= C1
C= 100 pF
IND
ID=L4
L=5.6 nH
IN D
ID=L1
L=18 nH
IND
ID= L2
L= 5.6 nH
CAP
POR T
ID=C9
P=2
C=10 0 p F Z= 50 Ohm
1
CAP
ID= C15
C=4.7 pF
RES
ID=R 2
R=10 Ohm
CAP
ID=C5
C=2 .4 p F
CAP
ID= C14
C=DNP pF
Bill of Materials
Ref. Desig.
C1, C3, C7, C9, C13
C4, C8
C5
C11
L1
L2, L4
L3
R1
R2
Q1
C2, C6, C10, C12, C14
Value
100 pF
1000 pF
2.4 pF
0.1
µF
18 nH
5.6 nH
82 nH
100
10
FP2189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 1W HFET
Do Not Place
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
14 mil GETEK
TM
ML200DSS (εr = 4.2)
The main microstrip line has a line impedance of 50
.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 12
October 2006
FP2189
1-Watt HFET
S11 vs. Frequency
S21 vs. Frequency
The Communications Edge
TM
Product Information
FP2189-PCB900S Application Circuit Performance Plots
S22 vs. Frequency
0
-5
S11 (dB)
-10
-15
-20
-25
-30
860
880
900
920
940
960
Frequency (MHz)
P1dB vs. Frequency
-40c
+25c
+85c
20
19
S21 (dB)
18
17
16
-40c
+25c
+85c
0
-5
S22 (dB)
-10
-15
-20
-25
-40c
+25c
+85c
15
860
880
900
920
940
960
Frequency (MHz)
Noise Figure vs. Frequency
-30
860
880
900
920
940
960
Frequency (MHz)
ACPR vs. Channel Power
IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW
34
32
P1dB (dBm)
30
28
26
-40c
+25c
+85c
6
5
NF (dB)
4
3
2
1
-40c
+25c
+85c
-30
ACPR (dBc)
-40
-50
-60
freq = 915 MHz
-40 C
+25 C
+85 C
24
860
880
900
920
940
960
Frequency (MHz)
OIP3 vs. Temperature
0
860
880
900
920
940
960
Frequency (MHz)
IMD products vs. Output Power
-20
IMD products (dBm)
-40
-60
-80
fundamental frequency = 915 MHz, 916 MHz; Temp = +25°C
-70
20
21
22
23
24
25
26
Output Channel Power (dBm)
OIP3 vs. Output Power
50
45
40
35
30
0
4
8
12
16
Output Power (dBm)
20
24
0
4
8
12
16
Output Power (dBm)
20
24
fundamental frequency = 915 MHz, 916 MHz; Temp = +25°C
46
44
OIP3 (dBm)
42
40
38
36
-40
-15
10
35
60
85
Temperature (°
C)
Output Power / Gain vs. Input Power
20
18
frequency = 915 MHz, Temp = -40°C
IMD_Low
IMD_High
freq = 915, 916 MHz
+15 dBm / tone
-100
Output Power / Gain vs. Input Power
32
Output Power (dBm)
28
24
20
20
18
frequency = 915 MHz, Temp = +85°C
OIP3 (dBm)
Output Power / Gain vs. Input Power
32
Output Power (dBm)
28
20
18
frequency = 915 MHz, Temp = +25°C
32
28
24
20
Output Power (dBm)
Gain (dB)
Gain (dB)
16
14
12
10
-4
0
4
8
12
Input Power (dBm
)
16
20
16
14
12
10
-4
0
4
8
12
Input Power (dBm
)
16
20
24
20
Output Power
16
12
Output Power
16
12
Gain (dB)
Gain
Gain
Gain
16
14
12
10
-4
0
4
8
12
Input Power (dBm
)
16
20
Output Power
16
12
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 4 of 12
October 2006
FP2189
1-Watt HFET
The Communications Edge
TM
Product Information
Application Circuit: 1930 – 1990 MHz (FP2189-PCB1900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I
ds
= 250 mA, 25
°
C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+15 dBm / tone, 1 MHz spacing)
MHz
dB
dB
dB
dBm
dBm
dB
dBm
1930
15.6
-15.4
-12
+30.2
1960
15.6
-14.6
-12
+30.4
+43.5
1990
15.4
-13.2
-12
+30.5
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
3.4
3.4
+23.8
3.6
CAP
CAP
CAP
ID=C3
ID=C10
ID=C4
C=33 pF C=1000 pF C=DNP pF
-Vgg
Vds=8V @ 250 mA
RES
ID=R1
R=20 Ohm
CAP
ID=C8
C=10000 pF
CAP
ID=C6
C=1000 pF
CAP
ID=C7
C=33 pF
IND
ID=L2
L=22 nH
CAP
ID=C11
C=DNP pF
CAP
ID=C2
C=2.4 pF
IND
ID=L1
L=10 nH
SUBCKT
ID=Q1
NET="FP2189"
RES
ID=R2
R=5.1 Ohm
1
2
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=33 pF
CAP
ID=C9
C=33 pF
PORT
P=2
Z=50 Ohm
CAP
ID=C13
C=2.4 pF
CAP
ID=C12
C=DNP pF
CAP
ID=C5
C=DNP pF
CAP
ID=C14
C=1.5 pF
Bill of Materials
Ref. Desig.
C1, C3, C7, C9
C2, C13
C4, C6
C8
C14
L1
L2
R1
R2
Q1
C5, C10, C11, C12
Value
100 pF
2.4 pF
1000 pF
0.1
µF
1.5 pF
10 nH
22 nH
20
5.1
FP2189
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 1W HFET
Do Not Place
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
14 mil GETEK
TM
ML200DSS (ε
r
= 4.2)
The main microstrip line has a line impedance of 50
.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 5 of 12
October 2006
Analog electronics
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