Product Description
Stanford Microdevices’ SNA-576 is a GaAs monolithic
broadband amplifier housed in a low-cost stripline ceramic
package. This amplifier provides 19dB of gain when biased
at 70mA and 5.0V.
External DC decoupling capacitors determine low fre-
quency response. The use of an external resistor allows
for bias flexibility and stability.
These unconditionally stable amplifiers are designed for
use as general purpose 50 ohm gain blocks. Also
available in chip form (SNA-500), its small size (0.4mm x
0.4mm) and gold metallization make it an ideal choice for
use in hybrid circuits.
The SNA-576 is available in tape and reel at 1000, 3000 and
5000 devices per reel.
SNA-576
DC-3 GHz, Cascadable
GaAs MMIC Amplifier
Output Power vs. Frequency
22
20
18
Product Features
•
Cascadable 50 Ohm Gain Block
•
19dB Gain, +18dBm P1dB
•
1.5:1 Input and Output VSWR
•
Operates From Single Supply
•
Low Cost Stripline Mount Ceramic Package
•
Hermetically Sealed
50 Ohm Gain Blocks
Applications
•
Narrow and Broadband Linear Amplifiers
•
Commercial and Industrial Applications
dB
16
14
12
0.1
1
2
3
4
5
GHz
Electrical Specifications at Ta = 25C
Sym bol
P a r a m e t e r s : T e s t C o n d itio n s :
Id = 7 0 m A , Z
0
= 5 0 O h m s
S m a ll S ig n a l P o w e r G a in
f = 0 .1 -1 .0 G H z
f = 1 .0 -2 .0 G H z
f = 2 .0 -3 .0 G H z
f = 0 .1 -2 .0 G H z
U n its
dB
dB
dB
dB
G H z
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -8 .0 G H z
f = 2 .0 G H z
f = 2 .0 G H z
f = 0 .1 -8 .0 G H z
dBm
psec
dB
V
d B /d e g C
m V /d e g C
4 .3
dBm
dB
M in .
1 8 .0
1 6 .0
1 5 .0
Ty p .
2 0 .0
1 8 .0
1 7 .0
+ /- 1 .0
3 .0
1 8 .0
4 .2
1 .5 :1
3 4 .0
120
2 2 .0
5 .0
-0 .0 0 2 7
-5 .0
5 .7
5 .0
M ax.
G
P
G
F
G a in F la tn e s s
3 d B B a n d w id th
O u tp u t P o w e r a t 1 d B C o m p r e s s io n
N o is e F ig u r e
In p u t / O u tp u t
T h ir d O r d e r In te r c e p t P o in t
G r o u p D e la y
R e v e r s e Is o la tio n
D e v ic e V o lta g e
D e v ic e G
a i n
T e m p e ra t u r e C o e ff ic ie n t
D e v ic e V o lt a g e T e m p e r a t u re C o e ff ic ie n t
BW 3dB
P
1dB
N F
VSW R
IP
T
3
D
IS O L
VD
d G /d T
d V /d T
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-73
SNA-576 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25
°
C (Vds = 5.0V, Ids = 70mA)
|S11| vs. Frequency
0
-5
22
20
18
|S21| vs. Frequency
dB
-10
-15
-20
0.1
1
2
3
4
5
dB
16
14
12
0.1
1
2
3
4
5
GHz
GHz
|S12| vs. Frequency
0
-5
-10
0
-5
|S22| vs. Frequency
dB
dB
-10
-15
-20
-25
0.1
1
2
3
4
5
-15
-20
0.1
1
2
3
4
5
GHz
GHz
50 Ohm Gain Blocks
Noise Figure vs. Frequency
6
38
36
5
34
TOIP vs. Frequency
dB
4
dBm
32
30
3
0.1
1.0
2
3
4
5
28
0.1
1
2
3
4
5
GHz
GHz
Typical S-Parameters Vds = 5.0V, Ids = 70mA
Freq GHz
.100
.250
.500
1.00
1.50
2.00
2.50
3.00
|S11|
0.219
0.146
0.179
0.190
0.183
0.153
0.106
0.050
S11 Ang
156
173
110
51
-7
-56
-106
-153
|S21|
10.104
10.087
8.744
8.302
7.747
7.348
6.651
5.943
S21 Ang
-76
-44
134
92
46
5
-40
-78
|S12|
0.065
0.078
0.079
0.080
0.081
0.083
0.085
0.087
S12 Ang
106
147
-26
-49
-76
-100
-128
-154
|S22|
0.178
0.110
0.152
0.180
0.212
0.230
0.233
0.219
S22 Ang
-124
-152
131
85
33
-13
-63
-107
(S-Parameters include the effects of two 1.0 mil diameter bond wires, each 20 mils long, connected to the gate and drain pads on the die)
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-74
SNA-576 DC-3 GHz Cascadable MMIC Amplifier
Absolute Maximum Ratings
P a r am e te r
A b s o lu te
M a xim u m
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
SNA-576-TR1
D e vic e Cu rren t
Po w e r D is sip a tio n
R F In pu t P ow e r
Ju n ctio n Tem p era tu re
O p e ratin g Te m p e ra tu re
Sto ra g e Te m p e ra ture
1 00 m A
5 60 m W
2 00 m W
+2 0 0 C
-4 5 C to +8 5C
-6 5 C to +1 50 C
SNA-576-TR2
SNA-576-TR3
1000
3000
5000
7"
13"
13"
Recommended Bias Resistor Values
Supply
Voltage(Vs)
Rbias (Ohms)
5V
*
7.5V
36
9V
57
12V
100
15V
143
20V
214
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
* Needs active biasing for constant current source
MTTF vs. Temperature @ Id = 70mA
Lead Temperature
Junction
Temperature
+155C
MTTF (hrs)
6.0
+45C
1000000
+80C
+190C
100000
+110C
+220C
10000
5.0
50 Ohm Gain Blocks
Thermal Resistance (Lead-Junction): 315° C/W
Typical Biasing Configuration
Pin Designation
1
2
3
4
RF in
GND
RF out
and Bias
GND
Typical Performance at 25
°
C
Power Gain vs. Device Current
21
20
19
18
17
16
15
14
13
12
0
1
2
3
4
Device Voltage vs. Current - Id
6
5.5
dB
Vdc
80mA
70mA
60mA
50mA
5
4.5
4
40mA
5
65
70
75
80
85
90
95
GHz
mA
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
5-75
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