LS301
Linear Integrated Systems
LS302
LS303
HIGH VOLTAGE
SUPER-BETA MONOLITHIC
DUAL NPN TRANSISTORS
FEATURES
VERY HIGH GAIN
LOW OUTPUT CAPACITANCE
TIGHT V
BE
MATCHING
HIGH f
T
h
FE
≥
2000 @ 1.0µA TYP.
C
OBO
≤2.0pF
|V
BE1
-V
BE2
| = 0.2mV TYP.
100MHz
C1
C2
E1
3
5
E2
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
Collector Current
5mA
I
C
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
B1
2
6
B2
-65° to +200°C
+150°C
B1
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
E1
E2
B2
1
C1
7
C2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL CHARACTERISTICS
LS301 LS302
Collector to Base Voltage
18
35
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
h
FE
h
FE
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
DC Current Gain
DC Current Gain
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
18
6.2
100
2000
2000
2000
0.5
100
0.2
2
2
0.5
100
3
35
6.2
100
1000
1000
1000
0.5
100
0.2
2
2
0.5
100
3
LS303
10
10
6.2
100
2000
2000
2000
0.5
100
0.2
2
2
0.5
100
3
MIN.
MIN.
MIN.
MIN.
TYP.
MIN.
TYP.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
UNITS
V
V
V
V
CONDITIONS
I
C
= 10µA
I
E
= 0
I
C
= 10µA
I
E
= 10µA
I
C
= 10µA
I
C
= 1µA
I
C
= 10µA
I
C
= 500µA
I
B
= 0
I
C
= 0
NOTE 2
I
E
= 0
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
I
B
= 0.1mA
V
CB
= NOTE 3
V
EB
= 3V
V
CB
= 1V
V
CE
(SAT) Collector Saturation Voltage
V
pA
pA
pF
pF
nA
MHz
dB
I
C
= 1mA
I
E
= 0
I
E
= 0
I
E
= 0
V
CC
= 0
V
CC
= NOTE 4
I
C
= 200µA
I
C
= 10µA
BW = 200Hz
f = 1KHz
V
CE
= 5V
V
CE
= 3V
R
G
= 10 KΩ
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
MATCHING CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Base Emitter Voltage Differential
|V
BE1
-V
BE2
|
∆|(V
BE1
-V
BE2
)|/°C
|I
B1
- I
B2
|
h
FE1
/h
FE2
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
DC Current Gain Differential
LS301
0.2
1
1
5
0.5
1
5
LS302
0.2
1
1
5
1
5
5
LS303
0.2
1
1
5
0.5
1.5
5
UNITS
TYP.
mV
MAX.
mV
TYP.
MAX.
TYP.
MAX.
TYP.
µV/°C
µV/°C
nA
nA
%
CONDITIONS
I
C
= 10
µA
I
C
= 10
µA
T = -55°C
I
C
= 10µA
I
C
= 10µA
I
C
= 10µA
to
V
CE
= 5V
V
CE
= 5V
+125°C
V
CE
= 1V
V
CE
= 5V
V
CE
= 5V
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.100
2 3 4
1
5
8 7 6
P-DIP
0.320
(8.13)
0.290
(7.37)
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
6 LEADS
0.019 DIA.
0.016
0.100
0.500 MIN.
0.050
2 3 4
1
8
5
6
7
SOIC
0.150
(3.81)
0.158
(4.01)
0.100
45°
0.046
0.036
45°
0.048
0.028
0.028
0.034
0.188
(4.78)
0.197
(5.00)
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.228
(5.79)
0.244
(6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10
µAmps.
3. For LS301 & LS302: V
CB
= 10V; for LS303: V
CB
= 5V.
4. For LS301 & LS302: V
CC
=
±80V;
for LS303: V
CC
=
±20V.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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