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P4KE

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size1MB,5 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Download Datasheet View All

P4KE Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS
P4KE
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
400 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
400 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
DO-41
Ratings at 25 C ambient temperature unless otherwise specified.
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load,
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P4KE6.8 thru P4KE400
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Power Dissipation at T
A
= 25 C, T
P
= 1mS ( Note 1 )
Steady State Power Dissipation at T
L
= 75 C lead lengths,
.375” ( 9.5 mm ) ( Note 2 )
Peak Forward Surge Current, 8.3ms single half sine wave-
superimposed on rated load( JEDEC METHOD ) ( NoteS 3 )
Maximum Instantaneous Forward Current at 25A for
unidirectional only ( Note 4 )
Operating and Storage Temperature Range
I
FSM
40
Amps
P
D
1.0
Watts
o
o
o
SYMBOL
P
PPM
VALUE
Minimum 400
UNITS
Watts
V
F
T
J
, T
STG
3.5/6.5
-65 to + 175
Volts
0
C
1998-8
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
2. Mounted on 1.6 X 1.6” ( 40 X 40mm ) per Fig. 5
3. V
F
= 3.0V max. for devices of V(
BR
) < 200V and V
F
= 6.5 Volts max. for devices of V(
BR
) > 200V.
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