30.0-46.0 GHz GaAs MMIC
Receiver
August 2007 - Rev 16-Aug-07
Features
Chip Device Layout
R1004-BD
Sub-harmonic Receiver
Integrated LNA, LO Doubler/Buffer, Image Reject Mixer
+4.0 dBm Input Third Order Intercept (IIP3)
+2.0 dBm LO Drive Level
9.0 dB Conversion Gain
3.5 dB Noise Figure
18.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s 30.0-46.0 GHz GaAs MMIC receiver has a noise
figure of 3.5 dB and 18.0 dB image rejection across the band. This
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO doubler and LO buffer
amplifer. The image reject mixer eliminates the need for a bandpass
filter after the LNA to remove thermal noise at the image frequency.
The use of integrated LO doubler and LO buffer amplifier makes the
provision of the LO easier than for fundamental mixers at these
frequencies. I and Q mixer outputs are provided and an external 90
degree hybrid is required to select the desired sideband. This MMIC
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
110, 180 mA
+0.3 VDC
+5 dBm
-65 to +165
O
C
-55 to MTTF Table
3
MTTF Table
3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
2
LO Input Drive (P
LO
)
Image Rejection
2
Noise Figure (NF)
2
Isolation LO/RF @ LOx1/LOx2
Input Third Order Intercept (IIP3)
1,2
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Gate Bias Voltage (Vg4,5) Mixer, Doubler
Supply Current (Id1,2) (Vd1,2=4.0, Vg=-0.3V Typical)
Supply Current (Id3) (Vd3=4.0V,Vg=-0.3V Typical)
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dB
dBm
VDC
VDC
VDC
mA
mA
Min.
35.0
30.0
15.5
DC
-
-
-
-
-
-
-
-
-1.2
-1.2
-
-
Typ.
-
-
-
-
10.0
9.0
+2.0
18.0
3.5
+4.0
+4.0
-0.3
-0.5
50
145
40.0/40.0
Max.
46.0
46.0
25.0
4.0
-
-
-
-
-
-
-
+5.5
+0.1
+0.1
100
165
(1) Measured using constant current.
(2) Measured using LO Input drive level of 0.0 and +2.0 dBm.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-46.0 GHz GaAs MMIC
Receiver
August 2007 - Rev 16-Aug-07
R1004-BD
Receiver Measurements
XR1004-BD Vd1,2,3=4.0 V, Id1,2=50 mA, Id3=145 mA, USB
LO=+2.0 dBm, IF=2.0 GHz, RF=-20.0 dBm, ~1570 Devices
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
30.0
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
30.0
XR1004-BD Vd1,2,3=4.0 V, Id1,2=50 mA, Id3=145 mA, LSB
LO=+2.0 dBm, IF=2.0 GHz, RF=-20.0 dBm, ~1570 Devices
Conversion Gain (dB)
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
45.0
46.0
Conversion Gain (dB)
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
45.0
46.0
RF Frequency (GHz)
Max
Median
Mean
-3sigma
Max
RF Frequency (GHz)
Median
Mean
-3sigma
XR1004-BD Vd1,2,3=4.0 V, Id1,2=50 mA, Id3=145 mA, USB
LO=+2.0 dBm, IF=2.0 GHz, RF=-20.0 dBm, ~1570 Devices
0
-5
Image Rejection (dBc)
0
-5
XR1004-BD Vd1,2,3=4.0 V, Id1,2=50 mA, Id3=145 mA, LSB
LO=+2.0 dBm, IF=2.0 GHz, RF=-20.0 dBm, ~1570 Devices
-10
-15
-20
-25
-30
-35
-40
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0 39.0
40.0
41.0
42.0
43.0
44.0
45.0
46.0
Image Rejection (dBc)
-10
-15
-20
-25
-30
-35
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0 39.0
40.0
41.0
42.0
43.0
44.0
45.0
46.0
RF Frequency (GHz)
Max
Median
Mean
-3sigma
Max
RF Frequency (GHz)
Median
Mean
-3sigma
XR1004-BD
24
22
20
average IIP3/OIP3 (dBm)
XR1004-BD (LSB, IF = 2 GHz, Pout_scl = -9 dBm): aver OIP3 vs RF
LO = -2 dBm (red) and +2 dBm (blue). 5 devices measured
18
16
14
12
10
8
6
4
2
0
32
33
34
35
36
RF Freq (GHz)
37
38
39
40
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 7
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-46.0 GHz GaAs MMIC
Receiver
August 2007 - Rev 16-Aug-07
R1004-BD
1.170
(0.046)
1.571
(0.062)
1.871
(0.074)
2.470
(0.097)
Mechanical Drawing
1.620
(0.064)
2
3
4
5
6
0.646
(0.025)
0.298
(0.012)
1
12
11
10
9
8
7
0.0
0.0
1.170
(0.046)
1.571
(0.062)
1.871
(0.074)
2.271
(0.089)
2.671
(0.105)
3.071
(0.121)
3.970
(0.156)
(Note: Engineering designator is 40REC0452)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.987 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (IF1)
Bond Pad #5 (Vd3)
Bond Pad #6 (LO)
Bond Pad #7 (Vg5)
Bond Pad #8 (Vg3)
Bond Pad #9 (Vg4)
Bond Pad #10 (IF2)
Bond Pad #11 (Vg2)
Bond Pad #12 (Vg1)
Bias Arrangement
Vd2
Vd1
IF1
2
3
4
5
Bypass Capacitors
- See App Note [2]
Vd1,2
Vd3
Vd3
IF1
RF
6
XR1004-BD
LO
Vg5
RF Out
RF
1
12
11
10
9
8
7
Vg1
IF2
Vg2
Vg4
Vg3
Vg5
IF2
Vg1,2
Vg4
Vg3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 7
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-46.0 GHz GaAs MMIC
Receiver
August 2007 - Rev 16-Aug-07
R1004-BD
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated by separately biasing Vd1, Vd2 and Vd3 with
Vd(1,2,3)=4.0V, Id1=Id2=25mA and Id3=145mA. Additionally, a mixer and doubler bias are also required with Vg4=Vg5=-0.5V. Adjusting Vg4
and Vg5 above or below this value can adversely affect conversion gain, image rejection and intercept point performance. It is also
recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible
results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low
power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is
protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is
available before applying the positive drain supply.
App Note [2] Bias Arrangement
-
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,2,3 and Vg1,2,3,4,5) needs to have DC bypass capacitance (~100-200 pF) as close to the device
as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W
C/W
C/W
E+
E+
E+
E+
E+
E+
Bias Conditions:
Vd1=Vd2=Vd3=4.0V, Id1=Id2=25 mA, Id3=145 mA
Typical Application
RF IN
37.0-39.5 GHz
XR1004-BD
Coupler
BPF
IF Out
2 GHz
LNA
IR Mixer
Buffer
AGC Control
X2
LO(+2.0dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
Mimix Broadband MMIC-based 30.0-46.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 46 GHz)
Mimix Broadband's 30.0-46.0 GHz XR1004-BD GaAs MMIC Receiver can be used in saturated radio applications and linear modulation
schemes up to 128 QAM. The receiver can be used in upper and lower sideband applications from 30.0-46.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 7
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-46.0 GHz GaAs MMIC
Receiver
August 2007 - Rev 16-Aug-07
R1004-BD
App Note [3] USB/LSB Selection
-
LSB
USB
For Upper Side Band operation (USB):
With IF1 and IF2 connected to the
direct port (0º) and coupled port (90º)
respectively as shown in the diagram,
the USB signal will reside on the
isolated port. The input port must be
loaded with 50 ohms.
IF2
IF1
For Lower Side Band operation (LSB):
With IF1 and IF2 connected to the
direct port (0º) and coupled port (90º)
respectively as shown in the diagram,
the LSB signal will reside on the input
port. The isolated port must be loaded
with 50 ohms.
An alternate method of Selection of USB or LSB:
USB
LSB
In Phase Combiner
In Phase Combiner
-90
o
-90
o
IF2
IF1
IF2
IF1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
京公网安备 11010802033920号
EEWORLD
