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H11B1

Description
photodarlington optocouplers
CategoryLED optoelectronic/LED    photoelectric   
File Size138KB,7 Pages
ManufacturerQT Optoelectronics
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H11B1 Overview

photodarlington optocouplers

H11B1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerQT Optoelectronics
package instructionDIP-6
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min25 V
ConfigurationSINGLE
Nominal current transfer ratio500%
Maximum dark power100 nA
Maximum forward current0.1 A
Maximum insulation voltage5300 V
JESD-609 codee0
Number of components1
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
Optoelectronic device typesDARLINGTON OUTPUT OPTOCOUPLER
Terminal surfaceTin/Lead (Sn/Pb)
PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The CNX48U, H11BX, MOC8080 and TIL113 have a
gallium arsenide infrared emitter optically coupled to a
silicon planar photodarlington.
CNX48U
H11B1
MOC8080 TIL113
H11B2
H11B255
H11B3
FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., H11B1.300)
6
1
6
1
ANODE 1
6 BASE
SCHEMATIC
APPLICATIONS
Low power logic circuits
6
Telecommunications equipment
Portable electronics
Solid state relays
Interfacing coupling systems of different potentials and impedances.
CATHODE 2
5 COLLECTOR
1
N/C 3
4 EMITTER
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (300 µs, 2% Duty Cycle)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
F
(pk)
P
D
Device
All
All
All
All
All
All
All
All
CNX48U, TIL113
H11B1, H11B2
Value
-55 to +150
-55 to +100
260 for 10 sec
250
3.3
100
6
3.0
100
1.8
30
25
55
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
Collector-Emitter Breakdown Voltage
BV
CEO
H11B3
H11B255
MOC8080
CNX48U, H11B1
H11B2, H11B3
V
30
V
Collector-Base Breakdown Voltage
BV
CBO
TIL113
H11B255
MOC8080
55
7
150
2.0
V
V
mW
mW/°C
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
BV
ECO
P
D
All
All
6/1/00
200042A

H11B1 Related Products

H11B1 MOC8080 H11B255
Description photodarlington optocouplers photodarlington optocouplers photodarlington optocouplers
Is it Rohs certified? incompatible incompatible incompatible
package instruction DIP-6 DIP-6 DIP-6
Reach Compliance Code unknown unknown unknown
Coll-Emtr Bkdn Voltage-Min 25 V 55 V 55 V
Configuration SINGLE SINGLE SINGLE
Nominal current transfer ratio 500% 500% 100%
Maximum dark power 100 nA 100 nA 100 nA
Maximum forward current 0.1 A 0.1 A 0.1 A
Maximum insulation voltage 5300 V 5300 V 5300 V
JESD-609 code e0 e0 e0
Number of components 1 1 1
Maximum operating temperature 100 °C 100 °C 100 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Optoelectronic device types DARLINGTON OUTPUT OPTOCOUPLER DARLINGTON OUTPUT OPTOCOUPLER DARLINGTON OUTPUT OPTOCOUPLER
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maker QT Optoelectronics - QT Optoelectronics
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