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BAV70-T1

Description
surface mount fast switching diode
CategoryDiscrete semiconductor    diode   
File Size61KB,2 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

BAV70-T1 Overview

surface mount fast switching diode

BAV70-T1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.855 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Maximum non-repetitive peak forward current2 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.35 W
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BAV70
Small Signal Si-Diodes
Surface mount Small Signal Double-Diodes
Kleinsignal-Doppel-Dioden für die Oberflächenmontage
Version 2004-01-27
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
310 mW
70 V
SOT-23
(TO-236)
0.01 g
1.1
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
1.3
±0.1
Type
Code
1
2
2.5
max
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Maße in mm
1 = A1 2 = A2 3 = K1/K2
Maximum ratings (T
A
= 25°C)
per diode / pro Diode
Power dissipation – Verlustleistung
Max. average forward current (dc)
Dauergrenzstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current
Stoßstrom-Grenzwert
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
t
p
1 s
t
p
1 ms
t
p
1 µs
P
tot
I
FAV
I
FRM
I
FSM
I
FSM
I
FSM
V
RRM
T
j
T
S
Grenzwerte (T
A
= 25°C)
BAV70
310 mW
1
)
200 mA
1
)
300 mA
1
)
0.5 A
1A
2A
70 V
150°C
- 55…+ 150°C
Characteristics (T
j
= 25°C)
Forward voltage - Durchlaßspannung
2
)
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
T
j
= 25°C
T
j
= 150°C
V
F
V
F
V
F
V
F
I
R
I
R
I
R
Kennwerte (T
j
= 25°C)
< 715 mV
< 855 mV
<1V
< 1.25 V
< 5 µA
< 60 µA
< 100 µA
Leakage current - Sperrstrom
2
)
V
R
= 70 V
V
R
= 25 V
V
R
= 70 V
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300 µs, duty cycle
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
2%
1
1

BAV70-T1 Related Products

BAV70-T1 BAV70-T3
Description surface mount fast switching diode surface mount fast switching diode
Is it Rohs certified? incompatible incompatible
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.855 V 0.855 V
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 2 A 2 A
Maximum operating temperature 150 °C 150 °C
Maximum output current 0.15 A 0.15 A
Maximum repetitive peak reverse voltage 75 V 75 V
Maximum reverse recovery time 0.006 µs 0.006 µs
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1

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