EM658160TS-8 datasheet, PDF - EEWORLD Datasheet

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EM658160TS-8: Description4M x 16 ddr synchronous dram (Sdram); Categorystorage storage; File Size155KB，26 Pages; ManufacturerEtron; Websitehttp://www.etron.com/

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EM658160TS-8 Overview

4M x 16 ddr synchronous dram (Sdram)

EM658160TS-8 Parametric

Parameter Name	Attribute value
Maker	Etron
Reach Compliance Code	compliant
Maximum access time	0.8 ns
Maximum clock frequency (fCLK)	125 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
memory density	67108864 bit
Memory IC Type	DDR DRAM
memory width	16
Number of terminals	66
word count	4194304 words
character code	4000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply	2.5,3.3 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	2,4,8
Maximum standby current	0.055 A
Maximum slew rate	0.18 mA
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	DUAL

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Etr onTech

Etron Confidential

EM658160

(Rev. 1.1 Jan./2002)

4M x 16 DDR Synchronous DRAM (SDRAM)

Features

Fast clock rate: 300/285/250/200/166/143/125MHz

Differential Clock CK & /CK

Bi-directional DQS

DLL enable/disable by EMRS

Fully synchronous operation

Internal pipeline architecture

Four internal banks, 1M x 16-bit for each bank

Programmable Mode and Extended Mode registers

- /CAS Latency: 2, 2.5, 3

- Burst length: 2, 4, 8

- Burst Type: Sequential & Interleaved

•

Individual byte write mask control

•

DM Write Latency = 0

•

Auto Refresh and Self Refresh

•

4096 refresh cycles / 64ms

•

Precharge & active power down

•

Power supplies: V

= 3.3V

0.3V

DDQ

= 2.5V

0.2V

•

Interface: SSTL_2 I/O Interface

•

Package: 66 Pin TSOP II, 0.65mm pin pitch

•

Pin Assignment (Top View)

VDD

DQ0

VDDQ

DQ1

DQ2

VSSQ

DQ3

DQ4

VDDQ

DQ5

DQ6

VSSQ

DQ7

VDDQ

LDQS

VDD

LDM

/WE

/CAS

/RAS

/CS

BS0

BS1

A10/AP

VDD

VSS

DQ15

VSSQ

DQ14

DQ13

VDDQ

DQ12

DQ11

VSSQ

DQ10

DQ9

VDDQ

DQ8

VSSQ

UDQS

VREF

VSS

UDM

/CK

CKE

A11

VSS

Ordering Information

Part Number

EM658160TS-3.3

EM658160TS-3.5

EM658160TS-4

EM658160TS-5

EM658160TS-6

EM658160TS-7

EM658160TS-8

Frequency

300MHz

285MHz

250MHz

200MHz

166MHz

143MHz

125MHz

Package

TSOP II

Overview

The EM658160 SDRAM is a high-speed CMOS

double data rate synchronous DRAM containing 64

Mbits. It is internally configured as a quad 1M x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal, CK).

Data outputs occur at both rising edges of CK and /CK.

Read and write accesses to the SDRAM are burst

oriented; accesses start at a selected location and

continue for a programmed number of locations in a

programmed sequence. Accesses begin with the

registration of a BankActivate command which is then

followed by a Read or Write command. The EM658160

provides programmable Read or Write burst lengths of 2,

4, 8, full page.

An auto precharge function may be enabled to

provide a self-timed row precharge that is initiated at the

end of the burst sequence. The refresh functions, either

Auto or Self Refresh are easy to use. In addition,

EM658160 features programmable DLL option. By

having a programmable mode register and extended

mode register, the system can choose the most suitable

modes to maximize its performance. These devices are

well suited for applications requiring high memory

bandwidth, result in a device particularly well suited to

high performance main memory and graphics

applications.

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

EM658160TS-8 Related Products

	EM658160TS-8	EM658160	EM658160TS-33	EM658160TS-6	EM658160TS-35	EM658160TS-5	EM658160TS-4	EM658160TS-7
Description	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)	4M x 16 ddr synchronous dram (Sdram)
Maker	Etron	-	-	Etron	-	Etron	Etron	Etron
Reach Compliance Code	compliant	-	-	compliant	-	compliant	compliant	compliant
Maximum access time	0.8 ns	-	-	0.7 ns	-	0.7 ns	0.6 ns	0.75 ns
Maximum clock frequency (fCLK)	125 MHz	-	-	166 MHz	-	200 MHz	250 MHz	143 MHz
I/O type	COMMON	-	-	COMMON	-	COMMON	COMMON	COMMON
interleaved burst length	2,4,8	-	-	2,4,8	-	2,4,8	2,4,8	2,4,8
JESD-30 code	R-PDSO-G66	-	-	R-PDSO-G66	-	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66
memory density	67108864 bit	-	-	67108864 bit	-	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	DDR DRAM	-	-	DDR DRAM	-	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	-	-	16	-	16	16	16
Number of terminals	66	-	-	66	-	66	66	66
word count	4194304 words	-	-	4194304 words	-	4194304 words	4194304 words	4194304 words
character code	4000000	-	-	4000000	-	4000000	4000000	4000000
Maximum operating temperature	70 °C	-	-	70 °C	-	70 °C	70 °C	70 °C
organize	4MX16	-	-	4MX16	-	4MX16	4MX16	4MX16
Output characteristics	3-STATE	-	-	3-STATE	-	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	-	-	TSSOP	-	TSSOP	TSSOP	TSSOP
Encapsulate equivalent code	TSSOP66,.46	-	-	TSSOP66,.46	-	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46
Package shape	RECTANGULAR	-	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	-	-	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	-	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
power supply	2.5,3.3 V	-	-	2.5,3.3 V	-	2.5,3.3 V	2.5,3.3 V	2.5,3.3 V
Certification status	Not Qualified	-	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	-	-	4096	-	4096	4096	4096
Continuous burst length	2,4,8	-	-	2,4,8	-	2,4,8	2,4,8	2,4,8
Maximum standby current	0.055 A	-	-	0.065 A	-	0.065 A	0.08 A	0.06 A
Maximum slew rate	0.18 mA	-	-	0.22 mA	-	0.25 mA	0.27 mA	0.2 mA
surface mount	YES	-	-	YES	-	YES	YES	YES
technology	CMOS	-	-	CMOS	-	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	-	-	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	-	-	GULL WING	-	GULL WING	GULL WING	GULL WING
Terminal pitch	0.635 mm	-	-	0.635 mm	-	0.635 mm	0.635 mm	0.635 mm
Terminal location	DUAL	-	-	DUAL	-	DUAL	DUAL	DUAL

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