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CEF10N6

Description
N-channel enhancement mode field effect transistor
CategoryDiscrete semiconductor    The transistor   
File Size397KB,4 Pages
ManufacturerChino-Excel
Download Datasheet Parametric View All

CEF10N6 Overview

N-channel enhancement mode field effect transistor

CEF10N6 Parametric

Parameter NameAttribute value
MakerChino-Excel
package instruction,
Reach Compliance Codeunknown
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP10N6
CEB10N6
CEF10N6
V
DSS
600V
600V
600V
R
DS(ON)
0.75Ω
0.75Ω
0.75Ω
I
D
10A
10A
10A
d
CEP10N6/CEB10N6
CEF10N6
@V
GS
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
G
G
D
S
G
CEP SERIES
TO-220
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ T
C
= 25 C
@ T
C
= 100 C
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AS
T
J
,T
stg
e
TO-220F
Units
V
V
600
±
30
10
6
40
166
1.3
187.5
5
-55 to 175
10
d
A
A
d
6
d
40
50
0.4
A
W
W/ C
mJ
A
C
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
h
Single Pulsed Avalanche Current
h
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
0.75
62.5
Limit
2.5
65
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2011.Feb
http://www.cetsemi.com
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