EtronTech
Features
•
Single power supply voltage of 2.3V to 3.6V
•
Power down features using CE1# and CE2
•
Low power dissipation
•
Data retention supply voltage: 1.0V to 3.6V
•
Direct TTL compatibility for all input and output
•
Wide operating temperature range: -40°C to 85°C
•
Standby current @ VDD = 3.6 V
I
DDS2
Typical
EM564081BA/BC-70/85
EM564081BA/BC-70E/85E
1
µA
5
µA
Maximum
10
µA
80
µA
E
VDD
D
GND
C
DQ5
NC
A5
A
EM564081
512K x 8 Low Power SRAM
Preliminary, Rev 0.7 01/2001
Pin Configuration
36-Ball BGA (CSP), Top View
1
2
3
4
5
6
A0
A1
CE2
A3
A6
A8
B
DQ4
A2
WE#
A4
A7
DQ0
DQ1
VDD
GND
F
DQ6
A18
A17
DQ2
Ordering Information
G
DQ7
Part Number
EM564081BC-70
EM564081BC-70E
EM564081BA-70
EM564081BA-70E
EM564081BC-85
EM564081BC-85E
EM564081BA-85
EM564081BA-85E
Speed
70 ns
70 ns
70 ns
70 ns
85 ns
85 ns
85 ns
85 ns
I
DDS2
10
µA
80
µA
10
µA
80
µA
10
µA
80
µA
10
µA
80
µA
Package
6x8 BGA
6x8 BGA
8x10 BGA
8x10 BGA
6x8 BGA
6x8 BGA
8x10 BGA
8x10 BGA
H
A9
OE#
CE1#
A16
A15
DQ3
A10
A11
A12
A13
A14
Pin Description
Symbol
A0 - A18
DQ0 – DQ7
CE1#, CE2
OE#
WE#
GND
V
DD
NC
Function
Address Inputs
Data Inputs / Outputs
Chip Enable Inputs
Output Enable
Read / Write Control Input
Ground
Power Supply
No Connection
Overview
The EM564081 is a 4,194,304-bit SRAM organized as 512K by 8 bits. It is designed with advanced CMOS
technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit technology
provides both high speed and low power. It is automatically placed in low-power mode when chip enable (CE1#)
is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are used to select the
device and for data retention control, and output enable (OE#) provides fast memory access. This device is
well suited to various microprocessor system applications where high speed, low power and battery backup are
required. And, with a guaranteed operating range from -40°C to 85°C, the EM564081 can be used in
environments exhibiting extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
EtronTech
Block Diagram
EM564081
A0
MEMORY
CELL ARRAY
512KX8
A18
VDD
GND
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
SENSE AMP
COLUMN ADDRESS
DECODER
W E#
CE1#
CE2
OE#
POWER DOWN
CIRCUIT
Preliminary
2
Rev 0.7
January 2001
EtronTech
Operating Mode
Mode
Read
Write
Output Deselect
Standby
X
L
X
X
CE1# CE2
L
L
L
H
H
H
H
X
OE# WE#
L
X
H
X
H
L
H
X
High-Z
DQ0~DQ7
DOUT
DIN
High-Z
EM564081
Note: X = don't care. H=logic high. L=logic low.
Absolute Maximum Ratings
Supply voltage, VDD
Input voltages, VIN
Input and output voltages, VI/O
Operating temperature, TOPR
Storage temperature, TSTRG
Soldering Temperature (10s), TSOLDER
Power dissipation, PD
-0.3 to +4.6V
-0.3 to +4.6V
-0.5 to VDD
+0.5V
-40 to +85°C
-55 to +150°C
260°C
0.6 W
DC Recommended Operating Conditions (Ta=-40°C to 85°C)
Symbol
VDD
VIH
VIL
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Min
2.3
2.2
-0.3
(2)
Typ
−
−
−
−
Max
3.6
VDD + 0.3
0.6
3.6
(1)
Unit
V
V
V
V
VDR
Data Retention Supply Voltage
Note:
(1) Overshoot : VDD +2.0V in case of pulse width
≤
20ns
(2) Undershoot : -2.0V in case of pulse width
≤
20ns
1.0
Preliminary
3
Rev 0.7
January 2001
EtronTech
DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
Parameter
Input low current
Output low
voltage
Output high
voltage
Symbol
IIL
VOL
VOH
IIN = 0V to VDD
IOL = 2.1 mA
IOH = -1.0 mA
VDD = 3.6 V
CE1# = VIL and
IDD1
Operating current
CE2 = VIH and
IOUT = 0mA
Other Input = VIH / VIL
IDD2
IDDS1
Standby current
IDDS2
**
(Note)
CE1# = VIH or CE2 = VIL
CE1# = VDD – 0.2V or
CE2 = 0.2V
VDD = 3.6 V
-70/85
VDD = 2.7 V
VDD = 2.3 V
VDD = 3.6 V
Cycle time = 1µs
Cycle time
= min
VDD = 2.7 V
VDD = 2.3 V
Test Conditions
Min
-1
-
VDD -
0.15
−
−
−
−
−
−
−
−
−
EM564081
Typ*
−
−
−
15
10
7
−
−
1
0.8
0.5
5
Max Unit
1
0.4
−
25
15
mA
12
5
0.5
10
5
3
80
µA
mA
µA
V
V
-70E/85E
Notes:
* Typical value are measured at T
a
= 25°C.
** In standby mode with CE1#
≥
VDD - 0.2V, these limits are assured for the condition
CE2
≥
V
DD
- 0.2V or CE2
≤
0.2V.
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
CIN
Min
−
Typ
−
Max
10
Unit
pF
Test Conditions
VIN = GND
COUT
10
pF
VOUT = GND
−
−
Notes:
This parameter is periodically sampled and is not 100% tested.
Preliminary
4
Rev 0.7
January 2001
EtronTech
Read Cycle
EM564081
AC Characteristics and Operating Conditions (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
EM564081
Symbol
tRC
tAA
tCO1
tCO2
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
Write Cycle
EM564081
Symbol
tWC
tWP
tCW
tAS
tWR
tWHZ
tOW
tDS
tDH
Write cycle time
Write pulse width
Chip Enable to end of write
Address setup time
Write Recovery time
WE# Low to Output in High-Z
WE# High to Output in Low-Z
Data Setup Time
Data Hold Time
Parameter
-85
−
−
−
−
−
35
−
−
−
-70
−
−
−
−
−
30
−
−
−
ns
Unit
Min Max Min Max
85
55
70
0
0
−
5
35
0
70
55
60
0
0
−
5
30
0
Read cycle time
Address access time
Chip Enable (CE1#) Access Time
Chip Enable (CE2) Access Time
Output enable access time
Chip Enable Low to Output in Low-Z
Output enable Low to Output in Low-Z
Chip Enable High to Output in High-Z
Output Enable High to Output in High-Z
Output Data Hold Time
Parameter
-85
−
85
85
85
45
−
−
35
35
−
-70
−
70
70
70
35
−
−
25
25
−
ns
Unit
Min Max Min Max
85
−
−
−
−
10
3
−
−
10
70
−
−
−
−
10
3
−
−
10
AC Test Condition
•
Output load: 50pF + one TTL gate
•
Input pulse level: 0.4V, 2.4V
•
Timing measurements: 0.5 x V
DD
•
tR, tF: 5ns
Preliminary
5
Rev 0.7
January 2001
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