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BDX65C

Description
npn silicon darlingtons
CategoryDiscrete semiconductor    The transistor   
File Size157KB,4 Pages
ManufacturerCOMSET
Websitehttp://comset.halfin.com/
Download Datasheet Parametric Compare View All

BDX65C Overview

npn silicon darlingtons

BDX65C Parametric

Parameter NameAttribute value
MakerCOMSET
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)12 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)117 W
surface mountNO
Nominal transition frequency (fT)7 MHz
NPN SILICON DARLINGTONS
General purpose darlingtons designed for power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
Value
60
80
100
120
80
100
120
140
5.0
Unit
V
V
CBO
Collector-BaseVoltage
V
V
EBO
Emitter-Base Voltage
V
I
C(RMS)
I
C
Collector Current
12
A
16
I
CM
I
B
Base Current
0.2
A
P
T
T
J
T
S
Power Dissipation
@ T
C
= 25°
117
Watts
W/°C
Junction Temperature
Storage Temperature
-55 to +200
°C
Page 1 of 4

BDX65C Related Products

BDX65C BDX65B BDX65A BDX65
Description npn silicon darlingtons npn silicon darlingtons npn silicon darlingtons npn silicon darlingtons
Maker COMSET COMSET COMSET COMSET
Reach Compliance Code unknown unknown unknown unknown
Maximum collector current (IC) 12 A 12 A 12 A 12 A
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000 1000 1000
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 117 W 117 W 117 W 117 W
surface mount NO NO NO NO
Nominal transition frequency (fT) 7 MHz 7 MHz 7 MHz -
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