TC1411/TC1411N
1A High-Speed MOSFET Drivers
Features
• Latch-Up Protected: Will Withstand 500 mA
Reverse Current
• Input Will Withstand Negative Inputs Up to 5V
• ESD Protected: 4 kV
• High Peak Output Current: 1A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 16V
• High Capacitive Load Drive Capability:
- 1000 pF in 25 nsec
• Short Delay Time: 30 nsec Typ.
• Matched Delay Times
• Low Supply Current
- With Logic ‘1’ Input: 500 µA
- With Logic ‘0’ Input: 100 µA
• Low Output Impedance: 8Ω
• Available in Space-Saving 8-pin MSOP Package
• Pinout Same as TC1410/TC1412/TC1413
Description
The TC1411/TC1411N are 1A CMOS buffers/drivers.
They will not latch-up under any conditions within their
power and voltage ratings. They are not subject to
damage when up to 5V of noise spiking of either
polarity occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of current
of either polarity being forced back into their output. All
terminals are fully protected against up to 4 kV of
electrostatic discharge.
As MOSFET drivers, the TC1411/TC1411N can easily
charge a 1000 pF gate capacitance in 25 nsec with
matched rise and fall times, and provide low enough
impedance in both the ON and the OFF states to
ensure the MOSFET’s intended state will not be
affected, even by large transients. The leading and
trailing edge propagation delay times are also matched
to allow driving short-duration inputs with greater
accuracy.
Package Types
8-Pin MSOP/PDIP/SOIC
V
DD
1
IN 2
NC 3
GND 4
2
8 V
DD
V
DD
1
IN 2
NC 3
8 V
DD
7 OUT
6 OUT
7 OUT
6 OUT
5 GND
2
6,7
Applications
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Relay Driver
TC1411
TC1411N
5 GND GND 4
6,7
Inverting
NC = No Internal Connection
Non-Inverting
Note:
Duplicate pins must be connected
together for proper operation.
©
2006 Microchip Technology Inc.
DS21390D-page 1
TC1411/TC1411N
Functional Block Diagram
TC1411
Inverting
Outputs
V
DD
300 mV
Output
Input
Effective
Input C = 10 pF
4.7V
Non-Inverting
Outputs
TC1411N
GND
DS21390D-page 2
©
2006 Microchip Technology Inc.
TC1411/TC1411N
1.0
ELECTRICAL
CHARACTERISTICS
†
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ..................................................... +20V
Input Voltage ...................... V
DD
+ 0.3V to GND – 5.0V
Power Dissipation (T
A
≤
70°C)
MSOP .......................................................... 340 mW
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Storage Temperature Range .............. -65°C to +150°C
Maximum Junction Temperature ...................... +150°C
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, over operating temperature range with 4.5V
≤
V
DD
≤
16V.
Typical values are measured at T
A
= +25°C, V
DD
= 16V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
V
OH
V
OL
R
O
V
DD
– 0.025
—
—
—
—
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
t
R
—
—
—
Fall Time
t
F
—
—
—
Delay Time
t
D1
—
—
—
Delay Time
t
D2
—
—
—
Power Supply
Power Supply Current
Note 1:
I
S
—
—
Switching times ensured by design.
0.5
0.1
1.0
0.15
mA
V
IN
= 3V, V
DD
= 16V
V
IN
= 0V
25
27
29
25
27
29
30
33
35
30
33
35
35
40
40
35
40
40
40
45
45
40
45
45
ns
ns
ns
ns
T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C,
Figure 4-1
T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C,
Figure 4-1
T
A
= +25°C,
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C,
Figure 4-1
T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C,
Figure 4-1
I
PK
I
REV
—
—
—
—
8
10
10
1.0
0.5
—
0.025
11
14
14
—
—
A
A
V
V
Ω
DC Test
DC Test
V
DD
= 16V, I
O
= 10 mA, T
A
= +25°C
0°C
≤
T
A
≤
+70°C
-40°C
≤
T
A
≤
+85°C
V
DD
= 16V
Duty cycle
≤
2%, t
≤
300 µs,
V
DD
= 16V
V
IH
V
IL
I
IN
2.0
—
-1.0
-10
—
—
—
—
—
0.8
1.0
10
V
V
µA
0V
≤
V
IN
≤
V
DD,
T
A
= +25°C
-40°C
≤
T
A
≤
+85°C
Sym
Min
Typ
Max
Units
Conditions
©
2006 Microchip Technology Inc.
DS21390D-page 3
TC1411/TC1411N
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
≤
V
DD
≤
16V.
Parameters
Temperature Ranges
Specified Temperature Range (C)
Specified Temperature Range (E)
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
θ
JA
θ
JA
θ
JA
—
—
—
206
125
155
—
—
—
ºC/W
ºC/W
ºC/W
T
A
T
A
T
A
T
J
T
A
0
-40
-40
—
-65
—
—
—
—
—
+70
+85
+125
+150
+150
ºC
ºC
ºC
ºC
ºC
Sym
Min
Typ
Max
Units
Conditions
DS21390D-page 4
©
2006 Microchip Technology Inc.
TC1411/TC1411N
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, over operating temperature range with 4.5V
≤
V
DD
≤
16V.
500
T
A
= +25°C
500
V
SUPPLY
= 16V
V
IN
= 3V
400
400
I
SUPPLY
(µA)
I
SUPPLY
(µA)
V
IN
= 3V
300
300
200
200
100
V
IN
= 0V
100
V
IN
= 0V
0
4
6
8
10
12
14
16
0
-40
-20
0
20
40
60
80
V
DD
(V)
TEMPERATURE (°C)
FIGURE 2-1:
Quiescent Supply Current
vs. Supply Voltage.
1.6
FIGURE 2-4:
vs. Temperature.
1.6
Quiescent Supply Current
T
A
= +25°C
V
SUPPLY
= 16V
1.5
1.5
V
THRESHOLD
(V)
1.4
V
THRESHOLD
(V)
V
IH
V
IH
1.4
1.3
1.3
1.2
V
IL
1.2
V
IL
1.1
4
6
8
10
12
14
16
1.1
-40
-20
0
20
40
60
80
V
DD
(V)
TEMPERATURE (°C)
FIGURE 2-2:
Voltage.
25
Input Threshold vs. Supply
FIGURE 2-5:
Temperature.
25
Input Threshold vs.
20
T
A
= +85°C
T
A
= +25°C
R
DS-ON
(Ohms)
20
R
DS-ON
(Ohms)
15
15
T
A
= +85°C
T
A
= +25°C
10
10
T
A
= -40°C
5
5
T
A
= -40°C
0 4
6
8
10
12
14
16
0
4
6
8
V
DD
(V)
10
V
DD
(V)
12
14
16
FIGURE 2-3:
High-State Output
Resistance vs. Supply Voltage.
FIGURE 2-6:
Low-State Output
Resistance vs. Supply Voltage.
©
2006 Microchip Technology Inc.
DS21390D-page 5
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