Bulletin I27125
rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability
Electrically isolated base plate
Available up to 1200 V
RRM
, V
DRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved
25A
Description
The P100 series of Integrated Power Circuits
consists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.
Major Ratings and Characteristics
Parameters
I
D
@ T
C
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
V
INS
T
J
P100
25
85
357
375
637
580
6365
400 to 1200
2500
- 40 to 125
Units
A
°C
A
A
A
2
s
A
2
s
A
2
√s
V
V
°C
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P100 Series
Bulletin I27125 rev. A 04/99
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
V
RRM
maximum repetitive V
RSM
maximum non-
V
DRM
maximum
peak reverse voltage
repetitive peak reverse repetitive peak off-state
voltage
voltage
V
V
V
400
600
800
1000
1200
500
700
900
1100
1300
400
600
800
1000
1200
I
RRM
max.
@ T
J
max.
mA
10
P101, P121, P131
P102, P122, P132
P103, P123, P133
P104, P124, P134
P105, P125, P135
On-state Conduction
Parameter
I
D
I
TSM
I
FSM
Maximum DC output current
Max. peak one-cycle
non-repetitive on-state
or forward current
P100
25
357
375
300
315
Units Conditions
A
@ T
C
= 85°C, full bridge
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
A
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
A
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
637
580
450
410
I
2
√t
Maximum I
2
√t
for fusing
6365
t = 0.1 to 10ms, no voltage reapplied
I
2
t for time tx = I
2
√t
.
√tx
V
T(TO)
Max. value of threshold voltage
r
t1
Max. level value of on-state
slope resistance
V
TM
V
FM
di/dt
Max. peak on-state or
forward voltage drop
Maximum non repetitive rate of
rise of turned on current
I
H
I
L
Maximum holding current
Maximum latching current
0.82
12
V
mΩ
T
J
= 125°C
T
J
= 125°C, Av. power = V
T(TO)
* I
T(AV)
+ r
t
+ (I
T(RMS)
)
2
1.35
V
T
J
= 25°C, I
TM
=
π
x I
T(AV)
T
J
= 125°C from 0.67 V
DRM
I
TM
=
π
x I
T(AV)
, I
g
= 500mA, tr < 0.5µs, tp > 6µs
T
J
= 25°C anode supply = 6V, resistive load, gate open
T
J
= 25°C anode supply = 6V, resistive load
200
130
250
A/µs
mA
mA
2
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P100 Series
Bulletin I27125 rev. A 04/99
Blocking
Parameter
dv/dt
Maximum critical rate of rise of
200
off-state voltage
I
RRM
I
DRM
I
RRM
V
INS
Max. peak reverse and off-state
leakage current at V
RRM
, V
DRM
Max peak reverse leakage current
10
100
mA
µA
T
J
= 125°C, gate open circuit
T
J
= 25°C
50Hz, circuit to base, all terminal shorted,
RMS isolation voltage
2500
V
T
J
= 25°C, t = 1s
V/µs
T
J
= 125°C, exponential to 0.67 V
DRM
gate open
P100
Units Conditions
Triggering
Parameter
P
GM
I
GM
- V
GM
Maximum peak gate power
P100
8
2
2
10
3
2
1
Units Conditions
W
A
P
G(AV)
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
V
GT
Maximum gate voltage required
to trigger
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
Anode Supply = 6V resistive load
I
GD
Maximum gate current
required to trigger
90
60
35
mA
T
J
= 25°C
T
J
= 125°C
Anode Supply = 6V resistive load
V
GD
Maximum gate voltage
that will not trigger
0.2
V
T
J
= 125°C, rated V
DRM
applied
I
GD
Maximum gate current
that will not trigger
2
mA
T
J
= 125°C, rated V
DRM
applied
Thermal and Mechanical Specification
Parameter
T
J
T
stg
P100
-40 to 125
Units
°C
Conditions
Max. operating temperature range
Max. storage temperature range
-40 to 125
2.24
K/W
DC operation per junction
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, base to heatsink
0.10
K/W
Mounting surface, smooth and greased
A mounting compound is recommended and the torque
should be checked after a period of 3 hours to allow for the
spread of the compound
4
Nm
wt
Approximate weight
58 (2.0)
g (oz)
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P100 Series
Bulletin I27125 rev. A 04/99
Circuit Type and Coding *
Circuit "0"
Terminal Positions
Circuit "2"
Circuit "3"
G1
G1
G2
G3
AC1
AC2
G1
Schematic diagram
diagram
AC1
AC2
AC2
AC1
G2
G4
G2
(-)
(+)
(-)
(+)
(-)
(+)
Single Phase
Hybrid Bridge
CommonCathode
Basic series
With voltage
suppression
With free-wheeling
diode
With both voltage
suppression and
free-wheeling diode
P10.
P10.K
P10.W
Single Phase
Hybrid Bridge
Doubler
P12.
P12.K
-
Single Phase
All SCR
Bridge
P13.
P13.K
-
P10.KW
-
-
*
To complete code refer to voltage ratings table, i.e.: for 600V P10.W complete code is P102W
Outline Table
4.6 (0.18)
12.7 (0.50) 12.7 (0.50)
1.65 (0.06)
4.6 (0.18)
2.5 (0.10) MAX .
15.5 (0.61)
63.5 (2.50)
Faston 6.35x0.8 (0.25x 0.03)
5.2 (0.20)
45 (1.77)
33.8 (1.33)
48.7 (1.91)
All dimensions in millimeters (inches)
4
32.5 (1.28) MAX.
23.2 (0.91)
25 (0.98) MAX.
MAX.
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P100 Series
Bulletin I27125 rev. A 04/99
60
Maximum Total Power Loss (W)
R
50
2
K/
W
SA
th
=
5
1.
K/
40
3K
/W
W
ta
el
-D
30
20
10
0
0
5
R
180°
(Sine)
5 K/
W
7 K/
W
P100 Series
T = 125°C
J
10
15
20
1 0 K/
W
25
0
25
50
75
100
125
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
Maximum Average On-state Power Loss (W)
15
180°
120°
90°
60°
30°
RMS Limit
Conduction angle
Maximum Average On-state Power Loss (W)
20
DC
180°
120°
90°
60°
30°
RMS Limit
Conduct ion Period
15
10
10
5
P100 Series
T
J
= 125°C
Per Junction
0
5
P100 Series
T
J
= 125°C
Per Junction
0
0
5
10
15
20
Average On-state Current (A)
0
5
10
15
Average On-state Current (A)
Fig. 2 - On-state Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
130
Fully Turned.on
120
110
100
90
P100 Series
Per Module
180°
(Sine)
180°
(Rect)
Fig. 3 - On-state Power Loss Characteristics
1000
Instantaneous On-state Current (A)
T
J
= 25 °C
T
J
= 125 °C
100
10
P100 Series
Per Junction
1
0
1
2
3
4
5
6
80
70
0
5
10
15
20
25
30
Total Output Current (A)
Instantaneous On-state Voltage (V)
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Voltage Drop Characteristics
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