MPSA63 / MMBTA63 / PZTA63
Discrete POWER & Signal
Technologies
MPSA63
MMBTA63
C
PZTA63
C
E
C
B
E
C
B
TO-92
E
SOT-23
Mark: 2U
B
SOT-223
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30
30
10
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSA63
625
5.0
83.3
200
Max
*MMBTA63
350
2.8
357
**PZTA63
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
©
1997 Fairchild Semiconductor Corporation
A63, Rev A
MPSA63 / MMBTA63 / PZTA63
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CES
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 100
µA,
I
B
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
30
100
100
V
nA
nA
ON CHARACTERISTICS*
h
FE
V
CE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, V
CE
= 5.0 V
5,000
10,000
1.5
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 5.0 V,
f = 100 MHz
125
MHz
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
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