2N5060 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed for high volume consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment.
Features
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•
Sensitive Gate Trigger Current
−
200
mA
Maximum
•
Low Reverse and Forward Blocking Current
−
50
mA
Maximum,
T
C
= 110°C
•
Low Holding Current
−
5 mA Maximum
•
Passivated Surface for Reliability and Uniformity
•
These are Pb−Free Devices
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
*40
to 110°C, Sine Wave,
2N5060
50 to 60 Hz, R
GK
= 1 kW)
2N5061
2N5062
2N5064
On-State Current RMS (180° Conduction
Angles; T
C
= 80°C)
*Average On-State Current
(180° Conduction Angles)
Symbol
V
DRM,
V
RRM
SILICON CONTROLLED
RECTIFIERS
0.8 A RMS, 30
−
200 V
G
A
Value
Unit
V
30
60
100
200
0.8
A
A
0.51
0.255
TO−92
CASE 29
STYLE 10
12
3
50xx
Y
WW
Specific Device Code
= Year
= Work Week
K
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
MARKING
DIAGRAM
2N
50xx
YWW
I
T(RMS)
I
T(AV)
(T
C
= 67°C)
(T
C
= 102°C)
I
TSM
I
2
t
I
T(AV)
*Peak Non-repetitive Surge Current,
T
A
= 25°C (1/2 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
*Average On-State Current
(180° Conduction Angles)
(T
C
= 67°C)
(T
C
= 102°C)
10
0.4
0.51
0.255
0.1
0.01
1.0
5.0
−40
to
+110
−40
to
+150
A
A
2
s
A
*Forward Peak Gate Power (Pulse Width
v
1.0
msec;
T
A
= 25°C)
*Forward Average Gate Power
(T
A
= 25°C, t = 8.3 ms)
*Forward Peak Gate Current (Pulse Width
v
1.0
msec;
T
A
= 25°C)
*Reverse Peak Gate Voltage (Pulse Width
v
1.0
msec;
T
A
= 25°C)
*Operating Junction Temperature Range
*Storage Temperature Range
P
GM
P
G(AV)
I
GM
V
RGM
T
J
T
stg
W
W
A
V
1
2
3
PIN ASSIGNMENT
Cathode
Gate
Anode
ORDERING INFORMATION
°C
°C
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*Indicates JEDEC Registered Data.
©
Semiconductor Components Industries, LLC, 2011
September, 2011
−
Rev. 10
1
Publication Order Number:
2N5060/D
2N5060 Series
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction−to−Case (Note 2)
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
75
200
Unit
°C/W
°C/W
2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(V
AK
= Rated V
DRM
or V
RRM
)
T
C
= 25°C
T
C
= 110°C
ON CHARACTERISTICS
*Peak Forward On−State Voltage (Note 4)
(I
TM
= 1.2 A peak @ T
A
= 25°C)
Gate Trigger Current (Continuous DC) (Note 5)
*(V
AK
= 7.0 Vdc, R
L
= 100
W)
Gate Trigger Voltage (Continuous DC) (Note 5)
*(V
AK
= 7.0 Vdc, R
L
= 100
W)
*Gate Non−Trigger Voltage
(V
AK
= Rated V
DRM
, R
L
= 100
W)
T
C
= 110°C
Holding Current (Note 3)
*(V
AK
= 7.0 Vdc, initiating current = 20 mA)
Turn-On Time
Delay Time
Rise Time
(I
GT
= 1.0 mA, V
D
= Rated V
DRM
,
Forward Current = 1.0 A, di/dt = 6.0 A/ms
Turn-Off Time
(Forward Current = 1.0 A pulse,
Pulse Width = 50
ms,
0.1% Duty Cycle, di/dt = 6.0 A/ms,
dv/dt = 20 V/ms, I
GT
= 1 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(Rated V
DRM
, Exponential, R
GK
= 1 kW)
*Indicates JEDEC Registered Data.
3. R
GK
= 1000
W
is included in measurement.
4. Forward current applied for 1 ms maximum duration, duty cycle
p
1%.
5. R
GK
current is not included in measurement.
dv/dt
−
30
−
V/ms
T
C
= 25°C
T
C
=
−40°C
T
C
= 25°C
T
C
=
−40°C
T
C
= 25°C
T
C
=
−40°C
V
TM
I
GT
−
−
1.7
V
mA
I
DRM
, I
RRM
−
−
−
−
10
50
mA
mA
Symbol
Min
Typ
Max
Unit
−
−
−
−
0.1
−
−
−
−
−
−
−
−
−
−
−
3.0
0.2
200
350
0.8
1.2
−
5.0
10
−
−
V
GT
V
GD
I
H
V
V
mA
ms
t
d
t
r
t
q
ms
2N5060, 2N5061
2N5062, 2N5064
−
−
10
30
−
−
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2
2N5060 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
CURRENT DERATING
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
130
120
110
100
dc
90
80
70
60
50
0
0.1
0.2
0.3
0.4
a
= 30°
120°
a
= CONDUCTION ANGLE
a
TA , MAXIMUM ALLOWABLE AMBIENT
TEMPERATURE (
°
C)
130
a
= CONDUCTION ANGLE
110
TYPICAL PRINTED
CIRCUIT BOARD
MOUNTING
a
CASE MEASUREMENT
POINT - CENTER OF
FLAT PORTION
90
70
60°
90°
180°
dc
50
a
= 30°
30
60°
0.2
90° 120°
0.3
180°
0.4
0.5
0
0.1
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
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3
2N5060 Series
CURRENT DERATING
5.0
ITSM , PEAK SURGE CURRENT (AMP)
10
7.0
5.0
3.0
2.0
T
J
= 110°C
25°C
1.0
0.7
0.5
3.0
2.0
i T , INSTANTANEOUS ON‐STATE CURRENT (AMP)
1.0
1.0
0.3
0.2
2.0
3.0
5.0 7.0
10
20
30
50 70
100
NUMBER OF CYCLES
Figure 4. Maximum Non−Repetitive Surge Current
0.8
P(AV), MAXIMUM AVERAGE POWER
DISSIPATION (WATTS)
0.1
0.07
0.05
120°
0.6
a
a
= CONDUCTION ANGLE
a
= 30°
60°
90°
180°
0.03
0.02
0.4
dc
0.2
0.01
0
0.5
1.0
1.5
2.0
2.5
v
T
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
0
0
0.1
0.2
0.3
0.4
0.5
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
Figure 3. Typical Forward Voltage
Figure 5. Power Dissipation
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4
2N5060 Series
r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (SECONDS)
Figure 6. Thermal Response
TYPICAL CHARACTERISTICS
0.8
VG , GATE TRIGGER VOLTAGE (VOLTS)
V
AK
= 7.0 V
R
L
= 100
R
GK
= 1.0 k
I GT , GATE TRIGGER CURRENT (NORMALIZED)
200
50
2N5062‐64
20
10
5.0
2N5060‐61
2.0
1.0
0.5
0.2
-75
-50
-25
0
25
50
75
100 110
T
J
, JUNCTION TEMPERATURE (°C)
V
AK
= 7.0 V
R
L
= 100
100
0.7
0.6
0.5
0.4
0.3
−75
-50
-25
0
25
50
75
100 110
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Trigger Voltage
Figure 8. Typical Gate Trigger Current
4.0
I H , HOLDING CURRENT (NORMALIZED)
3.0
2.0
V
AK
= 7.0 V
R
L
= 100
R
GK
= 1.0 k
1.0
0.8
2N5060,61
2N5062‐64
0.6
0.4
-75
-50
-25
0
25
50
75
100 110
T
J
, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Holding Current
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