MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
TM
5Power-MOSFET,25V
BSC009NE2LS5
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
OptiMOS
TM
5Power-MOSFET,25V
BSC009NE2LS5
1Description
Features
•Optimizedforhighperformancebuckconverters
•Verylowon-resistanceR
DS(on)
@V
GS
=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
8
7
SuperSO8
5
6
5
6
7
8
1
2
3
4
4
3
2
1
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
OSS
Q
G
(0V..4.5V)
Value
25
0.9
100
28
20
Unit
V
mΩ
A
nC
nC
S1
S2
S3
G4
8D
7D
6D
5D
Type/OrderingCode
BSC009NE2LS5
Package
PG-TDSON-8
Marking
09NE2LS5
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.0,2015-03-10
OptiMOS
TM
5Power-MOSFET,25V
BSC009NE2LS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
3
Rev.2.0,2015-03-10
OptiMOS
TM
5Power-MOSFET,25V
BSC009NE2LS5
2Maximumratings
atT
j
=25°C,unlessotherwisespecified
Table2Maximumratings
at 25 °C
Parameter
Symbol
Values
Min.
-
-
-
-
-
-
-
-
-16
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
100
100
100
100
41
400
50
90
16
74
2.5
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=4.5V,T
C
=25°C
V
GS
=4.5V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=50K/W
1)
T
C
=25°C
T
C
=25°C
I
D
=50A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=50K/W
1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Continuous drain current
I
D
A
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm
2
cooling area
1)
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
-
-
-
Max.
1.7
20
50
Unit
K/W
K/W
K/W
Note/TestCondition
-
-
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.2.0,2015-03-10
OptiMOS
TM
5Power-MOSFET,25V
BSC009NE2LS5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
25
1.2
-
-
-
-
-
-
75
Typ.
-
1.6
0.1
10
10
0.95
0.75
1
150
Max.
-
2
1
100
100
1.25
0.9
1.7
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=250µA
V
DS
=20V,V
GS
=0V,T
j
=25°C
V
DS
=20V,V
GS
=0V,T
j
=125°C
V
GS
=16V,V
DS
=0V
V
GS
=4.5V,I
D
=30A
V
GS
=10V,I
D
=30A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=30A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
2900
1400
130
4
6
30
4
Max.
3900
1900
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=30A,
R
G,ext
=1.6Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
1)
2)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
Q
g(sync)
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
-
Typ.
6.7
4.6
4.9
7.0
20
2.3
43
18
28
Max.
-
-
-
-
28
-
57
-
-
Unit
nC
nC
nC
nC
nC
V
nC
nC
nC
Note/TestCondition
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to4.5V
V
DD
=12V,I
D
=30A,V
GS
=0to10V
V
DS
=0.1V,V
GS
=0to4.5V
V
DD
=12V,V
GS
=0V
Defined by design. Not subject to production test
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.0,2015-03-10
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