Bulletin PD-20766 rev. B 02/04
8ETX06
8ETX06S
8ETX06-1
8ETX06FP
Hyperfast Rectifier
Features
•
•
•
•
•
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
UL E78996 approved
t
rr
= 15ns typ.
I
F(AV)
= 8Amp
V
R
= 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 143°C
@ T
C
= 106°C (FULLPACK)
Non Repetitive Peak Surge Current @ T
J
= 25°C
Peak Repetitive Forward Current
Operating Junction and Storage Temperatures
110
18
- 65 to 175
°C
Max
600
8
Units
V
A
Case Styles
8ETX06
8ETX06S
8ETX06-1
8ETX06FP
Base
Cathode
2
Base
Cathode
2
2
1
1
3
3
1
3
1
3
Cathode
Anode
Cathode
Anode
N/C
Anode
N/C
Anode
TO-220AC
www.irf.com
D
2
PAK
TO-262
TO-220 FULLPACK
1
8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP
Bulletin
PD-20766 rev. B 02/04
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
600
-
-
-
2.3
1.4
0.3
35
17
8.0
-
3.0
1.7
50
500
-
-
V
V
V
µA
µA
pF
nH
I
R
= 100µA
I
F
= 8A, T
J
= 25°C
I
F
= 8A, T
J
= 150°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 600V
Measured lead to lead 5mm from package body
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
C
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
15
16
17
40
2.3
4.5
20
100
31
12
195
19
24
-
-
-
-
-
-
-
-
-
ns
A
nC
T
J
= 125°C
nC
A
ns
I
F
= 1A, di
F
/dt = 100A/µs, V
R
= 30V
I
F
= 8A, di
F
/dt = 100A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 8A
di
F
/dt = 600A/µs
V
R
= 390V
I
F
= 8A
di
F
/dt = 200A/µs
V
R
= 390V
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
-
t
rr
I
RRM
Q
rr
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
-
-
-
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
R
thJA
R
thCS
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heatsink
Weight
Mounting Torque
Per Leg
Per Leg
(Fullpack) Per Leg
Min
-
- 65
-
-
-
-
-
-
6.0
5.0
Typ
-
-
1.4
3.4
-
0.5
2.0
0.07
-
-
Max
175
175
2
4.3
70
-
-
-
12
10
Units
°C
°C/W
g
(oz)
Kg-cm
lbf.in
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
www.irf.com
8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP
Bulletin
PD-20766 rev. B 02/04
100
Reverse Current - I
R
(µA)
1000
100
10
1
0.1
0.01
25˚C
T
J
= 175˚C
150˚C
125˚C
100˚C
Instantaneous Forward Current - I
F
(A)
10
0.001
T J = 175˚C
T = 150˚C
J
T = 25˚C
J
Junction Capacitance - C
T
(pF)
0
0
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
T = 25˚C
J
1
100
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
0
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
Notes:
P
DM
t1
t2
0.1
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
1
www.irf.com
3
8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP
Bulletin
PD-20766 rev. B 02/04
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
t1
t2
0.1
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 5 - Max. Thermal Impedance Z
thJC
Characteristics (FULLPACK)
180
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
180
160
140
120
100
80
Rated Vr applied
60
40
0
2
4
6
8
10
12
Average Forward Current - I
F
(AV)
(A)
Fig. 7 - Max. Allowable Case Temperature
Vs. Average Forward Current (FULLPACK)
see note (3)
Square wave (D = 0.50)
170
160
150
140
Square wave (D = 0.50)
Rated Vr applied
DC
DC
130
see note (3)
120
0
2
4
6
8
10
12
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Max. Allowable Case Temperature
Vs. Average Forward Current
20
Average Power Loss ( Watts )
18
16
14
12
10
8
6
4
2
0
0
Average Forward Current - I
F
(AV)
(A)
RMS Limit
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss =
I
F(AV)
x V
FM
@ (I
F(AV)
/
D)
(see Fig. 8);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D);
I
R
@ V
R1
= rated V
R
2
4
6
8
10
12
14
Fig. 8 - Forward Power Loss Characteristics
4
www.irf.com
8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP
Bulletin
PD-20766 rev. B 02/04
50
300
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
250
40
IF = 8 A
IF = 16 A
200
Qrr ( nC )
trr ( ns )
IF = 16 A
30
150
IF = 8 A
100
20
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
IF = 16 A
IF = 16 A
50
IF = 8 A
IF = 8 A
10
100
1000
0
100
1000
di
F
/dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. di
F
/dt
di
F
/dt (A/µs )
Fig. 10 - Typical Stored Charge vs. di
F
/dt
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 11- Reverse Recovery Parameter Test Circuit
www.irf.com
5
Embedded System
京公网安备 11010802033920号
EEWORLD
