AG603
InGaP HBT Gain Block
The Communications Edge
TM
Preliminary Product Information
Product Features
•
DC - 2700MHz
•
+18.5 dBm P1dB at 900MHz
•
+33.5 dBm OIP3 at 900MHz
•
17.6 dB Gain at 900MHz
•
Single Voltage Supply
•
SOT-89 SMT Package
Product Description
The AG603 is a general-purpose buffer amplifier that offers high
dynamic range in a low-cost surface-mount package. At 900 MHz,
the AG603 typically provides 17.6 dB of gain, +33.5 dBm Output
IP3, and +18.5 dBm P1dB. The device combines dependable
performance with consistent quality to maintain MTBF values
exceeding 100 years at mounting temperatures of +85°C and is
housed in a SOT-89 industry standard SMT package.
The AG603 consists of Darlington pair amplifiers using the high
reliability InGaP/GaAs HBT technology process technology and
only requires DC-blocking capacitors, a bias resistor, and an
inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to various
current and next generation wireless technologies such as GPRS,
GSM, CDMA, W-CDMA, and UMTS. In addition, the AG603
will work for other various applications within the DC to 2.7 GHz
frequency range such as CATV and fixed wireless.
Functional Diagram
GND
AG603
RF IN
GND
RF OUT
•
Internally matched to 50
Ω
AG603-89
Specifications
Parameters
1
Frequency Range
S21 - Gain
S11 - Input Return Loss
S22 - Output Return Loss
Output P1dB
Output IP3
Noise Figure
Device Voltage
Device Current
Typical Parameters
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Min
Typ
DC-2700
17.6
-15
-12
+18.5
+33.5
4.5
4.9
75
Max
Parameter
1
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Supply Voltage
Device Current
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Typical
900
17.6
-20
-15
+18.5
+33.5
4.5
6
75
1900
16
-25
-15
+18.1
+32.3
4.5
6
75
Test conditions unless otherwise noted
1. T = 25ºC, Supply Voltage = +6 V, R
bias
= 10
Ω,
Frequency = 900MHz, 50
Ω
System.
2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
1. Data represents typical performance in an application board with
T = 25ºC, V
s
= +6 V, and R
bias
= 10
Ω
in a 50
Ω
system.
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Ordering Information
Part No.
AG603-89
AG603-89PCB
Rating
-40 to +85
°C
-40 to +125
°C
Description
InGaP HBT Gain Block
SOT-89 Style Package
(Available in Tape & Reel)
Operation of this device above any of there parameters may cause permanent damage
Application Circuit
R1
10
Ω
Fully Assembled Application Board
V
S
= +6 V
I
S
= 75 mA
C3
Bypass Capacitor
RF IN
L1
RF
Choke
RF OUT
AG603
C1
Blocking
Capacitor
C2
Blocking
Capacitor
This document contains information on a new product.
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6620
•
e-mail: sales@wj.com
•
Web site: www.wj.com
June 2002
Microcontroller MCU
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