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1SS86

Description
MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size65KB,7 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

1SS86 Overview

MIXER DIODE

1SS86 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance0.85 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandULTRA HIGH FREQUENCY
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.15 W
Certification statusNot Qualified
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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