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1SV322

Description
28 pF, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size85KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

1SV322 Overview

28 pF, SILICON, VARIABLE CAPACITANCE DIODE

1SV322 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode Capacitance Tolerance5.36%
Minimum diode capacitance ratio4
Nominal diode capacitance28 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1SV322
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV322
TCXO/VCO
·
·
·
High capacitance ratio: C
1 V
/C
4 V
= 4.3 (typ.)
Low series resistance: r
s
= 0.4
(typ.)
Useful for small size tuner.
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V
R
T
j
T
stg
Rating
10
125
-55~125
Unit
V
°C
°C
JEDEC
JEITA
TOSHIBA
1-1E1A
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
V
R
I
R
C
1 V
C
4 V
C
1 V
/C
4 V
r
s
I
R
=
1
mA
V
R
=
10 V
V
R
=
1 V, f
=
1 MHz
V
R
=
4 V, f
=
1 MHz
¾
V
R
=
4 V, f
=
100 MHz
Test Condition
Weight: 0.004 g (typ.)
Min
10
¾
26.5
6.0
4.0
¾
Typ.
¾
¾
¾
¾
4.3
0.4
Max
¾
3
29.5
7.1
¾
0.8
Unit
V
nA
pF
pF
¾
W
Note: Signal level when capacitance is measured: Vsig
=
500 mVrms
Marking
1
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