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ASIS50-28

Description
NPN SILICON RF POWER TRANSISTOR
File Size20KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
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ASIS50-28 Overview

NPN SILICON RF POWER TRANSISTOR

ASI S50-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI S50-28
is Designed for
Class AB or C, Common Emitter
Linear HF Communications
Applications.
PACKAGE STYLE .500" 4L FLG
FEATURES INCLUDE:
High Power Gain
Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
9.0 A
65 V
117 W @ T
C
= 25
O
C
-55
O
C to +200
O
C
-55
O
C to +200
O
C
1.7 C/W
O
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
C
ob
P
out
P
G
η
C
I
C
= 200 mA
I
C
= 200 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 30 V
V
CE
= 28 V
T
C
= 25
O
C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
35
4.0
2.0
UNITS
V
V
V
mA
---
pF
W
dB
%
I
C
= 500 mA
f = 1.0 MHz
P
in
= 1.0 W
fo = 30 MHz
10
200
150
50
17
60
18
65
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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