DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ133, 2SJ133-Z
P-CHANNEL POWER MOS FET
FOR SWITCHING
FEATURES
• Gate drive available at logic level (V
GS
= –4 V)
• High current control available in small
dimension due to low R
DS(on)
(≅ 0.45
Ω)
• 2SJ133-Z is a lead process product and is deal
for mounting a hybrid IC.
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC
Semiconductor
Devices”
(Document
No.
Electrode connection
<1> Gate (G)
<2> Drain (D)
<3> Source (S)
<4> Fin (drain)
C11531E) published by NEC Corporation to
know the specification of quality grade on the
devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current (pulse)
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
V
GS
= 0
V
DS
= 0
T
C
= 25°C
PW
≤
300
µ
s
duty cycle
≤
10 %
T
C
= 25°C
T
a
= 25°C
Conditions
Ratings
−60
–
+20
–
+2.0
–
+8.0
Unit
V
V
A
A
INTERNAL
EQUIVALENT CIRCUIT
Total power dissipation
Total power dissipation
Channel temperature
Storage temperature
P
T
P
T
T
ch
T
stg
20
1.0*, 2.0**
150
−55
to +150
W
W
°C
°C
* Printing board mounted
2
** 7.5 cm
×
0.7 mm ceramic board mounted
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16193EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SJ133, 2SJ133-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Drain cutoff current
Gate cutoff current
Gate cutoff voltage
Forward transfer
admittance
Drain to source on-state
resistance
Drain to source on-state
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
V
GS(off)
y
ts
Conditions
V
DS
=
−60
V, V
GS
= 0
–
V
GS
= +20 V, V
DS
= 0
V
DS
=
−10
V, I
D
=
−1.0
mA
V
DS
=
−10
V, I
D
=
−1.0
A
V
GS
=
−10
V, I
D
=
−1.0
A
V
GS
=
−4
V, I
D
=
−0.8
A
V
DS
=
−10
V, V
GS
= 0 V
f = 1 MHz
−1.0
1.0
−2.0
1.8
MIN.
TYP.
MAX.
−10
–
+100
−3.0
Unit
µ
A
nA
V
S
Ω
Ω
R
DS(on)1
0.45
0.8
R
DS(on)2
0.7
1.3
C
iss
C
oss
C
rss
660
250
50
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
I
D
=
−1.0
A, V
GS(on)
=
−10
V
V
DD
≅ −30
V, R
L
= 30
Ω,
R
in
= 10
Ω
30
30
110
40
ns
ns
ns
ns
SWITCHING TIME TEST CIRCUIT, TEST CONDITION (RESISTANCE LOAD)
2
Data Sheet D16193EJ2V0DS
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