DATA SHEET
SILICON TRANSISTOR
GN4xxx
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
FEATURES
•
Compact package
•
Resistors built-in type
•
Complementary to GA4xxx
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
−0
Marking
0.15
+0.1
−0.05
3
2.1
±
0.1
ORDERING INFORMATION
PART NUMBER
GN4xxx
PACKAGE
SC-70
1.25
±
0.1
0 to 0.1
2
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
<R>
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature
<R>
Note 1.
PART NUMBER
GN4A4M
GN4F4M
GN4L4M
GN4L3M
GN4L3N
GN4L3Z
GN4A3Q
GN4A4P
GN4F4N
Note2
0.65
0.65
0.3
0.9
±
0.1
V
CBO
V
CEO
V
EBO
I
C
I
C(pulse)
P
T
T
j
T
stg
−60
−50
Note1
V
V
V
A
A
W
°C
°C
2
R
1
0.3
+0.1
−0
2.0
±
0.2
EQUIVALENT CIRCUIT
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector
−0.1
−0.2
0.15
150
−55
to +150
R
2
1
V
EBO
(V)
−10
−10
−10
−10
−5
−5
−5
−5
−5
MARK
NA1
NB1
NC1
ND1
NE1
NF1
NG1
NH1
NJ1
R
1
(kΩ)
10.0
22.0
47.0
4.7
4.7
4.7
1.0
10.0
22.0
R
2
(kΩ)
10.0
22.0
47.0
4.7
10.0
PART NUMBER
GN4L4L
GN4A4Z
GN4F4Z
GN4L4Z
GN4F3M
GN4F3P
V
EBO
(V)
−15
−5
−5
−5
−10
−5
−5
−15
−25
MARK
NK1
NL1
NM1
NN1
NP1
NQ1
NR1
NS1
NT1
R
1
(kΩ)
47.0
10.0
22.0
47.0
2.2
2.2
2.2
10.0
47.0
R
2
(kΩ)
22.0
2.2
10.0
47.0
4.7
10.0
10.0
47.0
47.0
GN4F3R
GN4A4L
GN4L4K
Note 2.
PW
≤
10 ms, Duty Cycle
≤
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16490EJ3V0DS00 (3rd edition)
Date Published December 2005 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
GN4xxx
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Collector Cut-off Current
DC Current Gain
Collector Saturation Voltage
Low-level Input Voltage
High-level Input Voltage
Input Resistor
Emitter to Base Resistor
SYMBOL
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
IL
V
IH
R
1
R
2
TEST CONDITIONS
V
CB
=
−50
V, I
E
= 0
V
CE
=
−5.0
V, I
C
=
−5.0
mA
V
CE
=
−5.0
V, I
C
=
−50
mA
I
C
=
−5.0
mA, I
B
=
−0.25
mA
V
CE
=
−5.0
V, I
C
=
−100
μ
A
V
CE
=
−0.2
V, I
C
=
−5.0
mA
Note3
Note2
−0.2
Note1
MIN.
TYP.
MAX.
−100
UNIT
nA
-
-
V
V
V
kΩ
kΩ
Note 1.
PART NUMBER
MIN.
GN4A4M
GN4F4M
GN4L4M
GN4L3M
GN4L3N
GN4L3Z
GN4A3Q
GN4A4P
GN4F4N
GN4L4L
GN4A4Z
GN4F4Z
GN4L4Z
GN4F3M
GN4F3P
GN4F3R
GN4A4L
GN4L4K
35
60
85
20
35
135
35
85
85
60
135
135
135
8
35
85
20
35
h
FE1
TYP.
MAX.
100
195
340
80
100
600
100
340
340
195
600
600
600
50
100
340
80
100
MIN.
80
90
95
80
80
100
80
95
95
90
100
100
100
50
80
95
80
80
h
FE2
TYP.
UNIT
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Note 2.
PART NUMBER
MIN.
GN4A4M
GN4F4M
GN4L4M
GN4L3M
GN4L3N
GN4L3Z
GN4A3Q
GN4A4P
GN4F4N
GN4L4L
GN4A4Z
GN4F4Z
GN4L4Z
GN4F3M
GN4F3P
GN4F3R
GN4A4L
GN4L4K
V
IL
TYP.
MAX.
−0.8
−0.8
−0.8
−0.8
−0.6
−0.5
−0.5
−0.5
−0.6
−0.9
−0.5
−0.5
−0.5
−0.8
−0.5
−0.5
−0.9
−2.0
MIN.
−3.0
−4.0
−5.0
−3.0
−3.0
−1.2
−2.0
−3.0
−3.0
−6.0
−2.0
−3.0
−4.0
−3.0
−2.0
−2.0
−6.0
−8.0
V
IH
TYP.
UNIT
MAX.
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
2
Data Sheet D16490EJ3V0DS
GN4xxx
Note 3.
PART NUMBER
MIN.
GN4A4M
GN4F4M
GN4L4M
GN4L3M
GN4L3N
GN4L3Z
GN4A3Q
GN4A4P
GN4F4N
GN4L4L
GN4A4Z
GN4F4Z
GN4L4Z
GN4F3M
GN4F3P
GN4F3R
GN4A4L
GN4L4K
7.00
15.40
32.90
3.29
3.29
3.29
0.70
7.00
15.40
32.90
7.00
15.40
32.90
1.54
1.54
1.54
7.00
32.90
R
1
TYP.
10.00
22.00
47.00
4.70
4.70
4.70
1.00
10.00
22.00
47.00
10.00
22.00
47.00
2.20
2.20
2.20
10.00
47.00
MAX.
13.00
28.60
61.10
6.11
6.11
6.11
1.30
13.00
28.60
61.10
13.00
28.60
61.10
2.86
2.86
2.86
13.00
61.10
MIN.
7.00
15.40
32.90
3.29
7.00
7.00
32.90
32.90
15.40
R
2
TYP.
10.00
22.00
47.00
4.70
10.00
10.00
47.00
47.00
22.00
UNIT
MAX.
13.00
28.60
61.10
6.11
13.00
13.00
61.10
61.10
28.60
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
1.54
7.00
32.90
3.29
7.00
2.20
10.00
47.00
4.70
10.00
2.86
13.00
61.10
6.11
13.00
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mW
250
200
150
100
50
0
0
50
100
150
200
T
A
- Ambient Temperature -
°C
Data Sheet D16490EJ3V0DS
3
GN4xxx
[GN4A4M]
TYPICAL CHARACTERISTICS (T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
−50
−40
−30
−20
−10
0
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
V
CE
- Collector to Emitter Voltage - V
- 0.5
- 0.4
- 0.3
- 0.2
- 0.1
0
0
- 20
- 40
- 60
- 80
- 100
I
C
- Collector Current - mA
I
B
=
−430
μ
A
−380
−330
−280
−230
−180
−130
−80
V
IN
= 5.0 V
10.0 V
15.0 V
0
−2
−4
−6
−8
−10
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
V
CE(sat)
- Collector Saturation Voltage - V
-1
V
CE
=
−5.0
V
h
FE
- DC Current Gain
100
I
C
= 10½I
B
10
T
A
= 75°C
25°C
−25°C
- 0.1
1
-1
- 10
- 100
- 0.01
-1
- 10
T
A
= 75°C
25°C
−25°C
- 100
I
C
- Collector Current - mA
I
C
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
- 100
COLLECTOR CURRENT vs. INPUT VOLTAGE
- 1000
V
CE
=
−0.2
V
I
C
- Collector Current -
μ
A
V
CE
=
−5.0
V
T
A
= 75°C
V
IN
- Input Voltage - V
- 10
- 100
-1
T
A
=
−25°C
25°C
75°C
-1
- 10
- 100
25°C
- 10
−25°C
- 0.1
-1
- 0.4
- 0.6
- 0.8
-1
- 1.2
- 1.4
- 1.6
- 1.8
I
C
- Collector Current - mA
V
IN
- Input Voltage - V
RESISTOR vs. AMBIENT TEMPERATURE
20
16
R - Resistor - kΩ
12
8
4
0
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
4
Data Sheet D16490EJ3V0DS
GN4xxx
[GN4F4M]
TYPICAL CHARACTERISTICS (T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
- Collector to Emitter Voltage - V
−50
COLLECTOR TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
- 0.5
- 0.4
- 0.3
- 0.2
- 0.1
0
0
- 20
- 40
I
C
- Collector Current - mA
I
B
=
−400
μ
A
−350
−300
−250
−200
−150
−100
−50
V
IN
= 5.0 V
10.0 V
−40
−30
−20
−10
0
15.0 V
0
−2
−4
−6
−8
−10
V
CE
- Collector to Emitter Voltage - V
I
C
- Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
V
CE(sat)
- Collector Saturation Voltage - V
-1
V
CE
=
−5.0
V
h
FE
- DC Current Gain
100
I
C
= 10
½
I
B
10
T
A
= 75°C
25°C
−25°C
- 0.1
1
-1
- 10
- 100
- 0.01
-1
- 10
T
A
= 75°C
25°C
−25°C
- 100
I
C
- Collector Current - mA
I
C
- Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRENT
- 100
COLLECTOR CURRENT vs. INPUT VOLTAGE
- 1000
I
C
- Collector Current -
μ
A
V
CE
=
−0.2
V
V
IN
- Input Voltage - V
- 10
V
CE
=
−5.0
V
T
A
= 75°C
- 100
25°C
- 10
-1
T
A
=
−25°C
25°C
75°C
- 100
−25°C
- 0.1
-1
- 10
-1
- 0.6
- 0.8
-1
- 1.2
- 1.4
- 1.6
I
C
- Collector Current - mA
V
IN
- Input Voltage - V
RESISTOR vs. AMBIENT TEMPERATURE
50
40
R - Resistor - kΩ
30
20
10
-25
0
25
50
75
100
T
A
- Ambient Temperature - °C
Data Sheet D16490EJ3V0DS
5
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