DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLA1011-10
Avionics LDMOS transistor
Product specification
Supersedes data of 2002 Oct 02
2003 Nov 19
Philips Semiconductors
Product specification
Avionics LDMOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Excellent ruggedness
•
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
•
Avionics transmitter applications in the
1030 to 1090 MHz frequency range.
DESCRIPTION
2
1
BLA1011-10
PINNING - SOT467C
PIN
1
2
3
drain
gate
source, connected to flange
DESCRIPTION
3
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.
Top view
MBK584
Fig.1 Simplified outline (SOT467C).
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source test circuit.
MODE OF OPERATION
Pulsed class-AB;
t
p
= 50
µs; δ
= 2 %
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BLA1011-10
−
DESCRIPTION
flanged LDMOST ceramic package; 2 mounting holes; 2 leads
VERSION
SOT467C
f
(MHz)
1030 to 1090
V
DS
(V)
36
P
L
(W)
10
G
p
(dB)
>15
η
D
(%)
>40
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
T
h
≤
25
°C
CONDITIONS
−
−
−
−
−65
−
MIN.
MAX.
75
±15
2.2
25
+150
200
V
V
A
W
°C
°C
UNIT
2003 Nov 19
2
Philips Semiconductors
Product specification
Avionics LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
Z
th(j-mb)
R
th(mb-h)
Notes
1. Thermal impedance is determined under RF operating conditions with pulsed bias.
2. Typical value for SOT467C mounted with thermal compound and 0.6 Nm fastening torque.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
CONDITIONS
V
GS
= 0; I
D
= 0.7 mA
V
DS
= 10 V; I
D
= 20 mA
V
GS
= 0; V
DS
= 28 V
V
GS
=
±15
V; V
DS
= 0
V
DS
= 10 V; I
D
= 0.75 A
V
GS
= 10 V; I
D
= 0.75 A
4
−
−
−
−
MIN.
75
−
−
−
−
−
0.5
1.2
PARAMETER
thermal impedance from junction to mounting base
thermal resistance from mounting base to heatsink
note 2
CONDITIONS
T
mb
= 25
°C;
note 1
BLA1011-10
VALUE
1.2
0.55
UNIT
K/W
K/W
TYP.
MAX.
−
5
0.1
−
40
−
−
UNIT
V
V
mA
A
nA
S
Ω
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V 2.8
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°C;
R
th mb-h
= 0.55 K/W unless otherwise specified.
MODE OF
OPERATION
Pulsed class-AB;
t
p
= 50
µs; δ
= 2%
f
(MHz)
1030 to 1090
V
DS
(V)
36
I
DQ
(mA)
50
P
L
(W)
10
G
p
(dB)
>15
η
D
(%)
>40
t
r
(ns)
<20
t
f
(ns)
<20
PULSE DROOP
(dB)
<0.5
Ruggedness in class-AB operation
The BLA1011-10 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under
the operating conditions.
Typical impedance values
FREQUENCY
(MHz)
1030
1060
1090
Z
S
(Ω)
1 + j 10.6
1.3 + j 6.99
1.42 + j 7
Z
L
(Ω)
4.3 + j 7
5.99 + j 13.98
7 + j 11.58
2003 Nov 19
3
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
handbook, halfpage
15
MGU494
handbook, halfpage
PL
(W)
24
Gp
(dB)
20
MGU493
η
D
Gp
60
η
D
(%)
50
10
16
(1)
(2)
(3)
40
12
(1)
(2)
(3)
30
5
8
20
4
10
0
0
50
100
PD (mW)
150
0
0
5
10
PL (W)
0
15
T
h
= 25
°C;
V
DS
= 36 V; I
DQ
= 50 mA; class-AB;
t
p
= 50
µs; δ
= 2%.
(1) f = 1090 MHz.
(2) f = 1060 MHz.
(3) f = 1030 MHz.
T
h
= 25
°C;
V
DS
= 36 V; I
DQ
= 50 mA; class-AB;
t
p
= 50
µs; δ
= 2%.
(1) f = 1090 MHz.
(2) f = 1060 MHz.
(3) f = 1030 MHz.
Fig.2
Load power as a function of drive power;
typical values.
Fig.3
Power gain and efficiency as functions of
load power; typical values.
handbook, halfpage
G
24
p
(dB)
20
MGU495
handbook, halfpage
12
MGU496
PL
(W)
8
16
12
8
4
4
0
1000
0
1040
1080
f (MHz)
1120
0
1
2
3
4
VGS (V)
5
T
h
= 25
°C;
V
DS
= 36 V; I
DQ
= 50 mA; class-AB;
P
L
= 10 W; t
p
= 50
µs; δ
= 2%.
T
h
= 25
°C;
V
DS
= 36 V; I
DQ
= 50 mA; class-AB;
f = 1090 MHz; t
p
= 50
µs; δ
= 2%.
Fig.4
Power gain as a function of frequency;
typical values.
Fig.5
Load power as a function of gate-source
voltage; typical values.
2003 Nov 19
4
Philips Semiconductors
Product specification
Avionics LDMOS transistor
BLA1011-10
handbook, full pagewidth
51.75
51.75
C13
C14
C7 C6
C5
C1 C2
C3
C4
R1
C15
3.2
13.5
37.5
C8
C10
3.5
6.0
9.3
C9
C11
60
C12
MGU497
Dimensions in mm.
The components are situated on one side of the Rogers 6006 printed-circuit board (thickness = 0.64 mm;
ε
r
= 6.2), the other side is unetched
and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization.
Fig.6 Printed-circuit board for class-AB test circuit.
List of components for class-AB test circuit
(see Fig.6)
COMPONENT
C1
C2, C11
C3
C4
C5
C6
C7, C13
C8
C9
C10
C12
C14
C15
R1
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 200B or capacitor of same quality.
2003 Nov 19
5
DESCRIPTION
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
tekelec trimmer; type 37293
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 2
electrolytic capacitor
multilayer ceramic chip capacitor; note 1
SMD resistor (0805)
2.7 pF
56 pF
0.8 to 8 pF
3.6 pF
6.2 pF
2 pF
62 pF
11 pF
1.5 pF
6.2 pF
20 nF
4.7
µF;
50 V
36 pF
22
Ω
VALUE
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