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3SK296ZQ

Description
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size101KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

3SK296ZQ Overview

RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel

3SK296ZQ Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)0.025 A
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
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